True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on<i>c</i>-Plane GaN

Avramescu, Adrian; Lermer, Teresa; Müller, Jens; Eichler, Christoph; Bruederl, Georg; Sabathil, M.; Lutgen, S.; Strauß, Uwe

doi:10.1143/apex.3.061003

Cited by 143 publications

(100 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Wurtzite InGaN quantum wells (QWs) are a very important gain medium for fabricating optoelectronic devices, such as near ultraviolet, blue, and green light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The growth of InGaN QWs along the [0001] direction leads to a QW system with a very strong quantum confined Stark effect due to the large internal electric fields which result from discontinuities in spontaneous and piezoelectric polarization at QW heterointerfaces [15,16].…”

Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

View full text Add to dashboard Cite

It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

show abstract

Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

View full text Add to dashboard Cite

show abstract

“…It does not only limit the efficiency of green light emitting diodes. The performance of green emitting laser diodes -although functioning laser diodes were recently demonstrated up to 532 nm [2] -is subject to it as well. An efficient and reproducible fabrication of green laser diodes and LEDs demands a full understanding of the origin of the green gap.…”

Section: Introductionmentioning

confidence: 99%

Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures

Langer

Kruse

Ketzer

et al. 2011

Phys. Status Solidi C

104

View full text Add to dashboard Cite

Using time‐resolved photoluminescence spectroscopy on GaInN/GaN multiple quantum well structures, we analyze the radiative and nonradiative processes contributing to the “green gap” in GaN‐based light emitting devices. We observe that it is only partly caused by a reduced oscillator strength due to the Quantum Confined Stark Effect (QCSE) which becomes stronger with increasing indium concentration and well width. As the dominant effect we observe a reduction of nonradiative lifetimes when the indium concentration is increased. For higher indium concentrations, we find an additional nonradiative recombination path that might be attributed to an increased generation of defects like misfit dislocations, nitrogen vacancies and/or indium clusters within the optically active region. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Recent successful demonstrations of cw-operation of LDs with emission wavelengths of up to l ¼ 524 nm on polar GaN(0001) substrates and of l ¼ 531 nm on semi-polar (2021) substrates highlight the importance of defect reduction to fully reveal the fundamental limits of device performances for different crystallographic planes [12,13]. However, low-defectdensity semi-polar bulk substrates are not yet readily available in size, quality and number since they are cut from relatively thin GaN(0001) substrates.…”

Section: Introductionmentioning

confidence: 99%

Semi‐polar nitride surfaces and heterostructures

Strittmatter

Northrup

Johnson

et al. 2010

Physica Status Solidi (b)

View full text Add to dashboard Cite

This paper reviews semi-polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi-polar (1122) and nonpolar (1100) surfaces. Specific features of semi-polar InGaN/ GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum-wellbased light emitting devices. The analysis favours semi-polar surfaces such as the (1122) surface as growth plane for longwavelength light emitters. Therefore, the experimental sections emphasize progress towards long-wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large-area GaN(1122)/m-sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.

show abstract

True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

Cited by 143 publications

References 10 publications

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures

Semi‐polar nitride surfaces and heterostructures

Contact Info

Product

Resources

About