True-blue InGaN laser for pico size projectors

Strauβ, U.; Brüninghoff, Stefanie; Schillgalies, Marc; Vierheilig, Clemens; Gmeinwieser, Nikolaus; Kümmler, V.; Brüderl, G.; Lutgen, S.; Avramescu, Adrian; Queren, Desirée; Dini, D.; Eichler, Christoph; Lell, A.; Schwarz, Ulrich

doi:10.1117/12.761720

Cited by 39 publications

(14 citation statements)

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“…Considering the electric input power and optical output power, thermal resistance of the LD is calculated according to (5). The measured and revised junction temperature and thermal resistance of the LD under different operating current from 32 mA to 70 mA are shown in Fig.…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…Besides, for high-brightness light sources and laser projectors, high-power LDs are required in which thermal management is one of the critical issues that affecting the reliability of the diodes [4,5]. Junction temperature and thermal resistance are two important parameters which significantly affect the threshold current and output power of LDs [6,7].…”

Section: Introductionmentioning

confidence: 99%

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High accuracy thermal resistance measurement in GaN/InGaN laser diodes

Wen¹,

Li²,

Zhang³

et al. 2015

Solid-State Electronics

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Section: Experiments and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High accuracy thermal resistance measurement in GaN/InGaN laser diodes

Wen¹,

Li²,

Zhang³

et al. 2015

Solid-State Electronics

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“…Furthermore, high-power GaN-based LDs are enabling new types of applications, such as high-brightness light sources 4) and laser projectors. 5) For high power laser diodes, efficient heat dissipation is critical as self-heating leads to lower slope efficiency and reduced device lifetime. The LD junction temperature has been shown to strongly influence the degradation rate of the device.…”

Section: Introductionmentioning

confidence: 99%

InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator

Tan

Bousquet

Kauer

et al. 2009

jjap

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We report on a method for using aluminium nitride (AlN) as the electrical insulator in ridge waveguide blue-violet laser diodes (LDs). The AlN layer is deposited by molecular beam epitaxy, with good sidewall conformality. The slope efficiency (0.66 W/A for uncoated facets) and leakage current (100 pA) of 1:9 Â 700 mm 2 devices fabricated using this method are as good as those of conventional LDs with SiO 2 insulator. The threshold current is 57 mA compared to 53 mA for SiO 2 LDs, accounted for by the higher refractive index of AlN. Selfconsistent LD simulations show that a reduction in junction temperature compared to conventional SiO 2 LDs is achievable.

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“…1 Introduction (Al,In)GaN laser diodes (LDs) are upcoming for laser projection purposes [1] and for Blu-Ray drives. For all these applications, modulation of the optical signal in the MHz or GHz range is necessary.…”

mentioning

confidence: 99%

Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes

Schmidtke

Braun

Schwarz

et al. 2009

Phys. Status Solidi (c)

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We investigate the spectral and temporal behavior of conventional narrow ridge (Al,In)GaN laser diodes (LDs) emitting at a wavelength of about 405 nm, grown on low dislocation density GaN substrate. In time resolved measurements of the lasing spectra we find a quasi‐periodic hopping among several longitudinal modes, which leads to time‐averaged multimode‐like output spectra. The experimental data are compared to a multimode rate equation model that was adapted to the (Al,In)GaN material system. While mode hopping is well studied for other material systems, we investigate whether this mechanism is identical in blue (Al,In)GaN LDs (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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True-blue InGaN laser for pico size projectors

Cited by 39 publications

References 0 publications

High accuracy thermal resistance measurement in GaN/InGaN laser diodes

High accuracy thermal resistance measurement in GaN/InGaN laser diodes

InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator

Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes

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