TRIZ and HDC sapphire growth process

Medvecky, Stefan; Mikita, Miroslav; Hoc, Michal; Kajan, Juraj

doi:10.5937/jaes15-11917

Cited by 2 publications

(3 citation statements)

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“…The dependence of the effective segregation coefficient on the phase interface surface on the growth rate can be described using the Barton, Prim and Stichler formula 3,[16][17][18][19][20][21][22] :…”

Section: The Influence Of Thermal Processes On the Defects Formation mentioning

confidence: 99%

“…The analysis of thermophysical processes during sapphire crystals growth by HDC method is under investigation for several years. [1][2][3][4][5][6] Only few theoretical works describe the causes of defects formation in sapphire crystals [7][8][9][10][11][12][13][14][15][16][17] but some aspects of defects formation should be considered in a more detailed manner. The aim of this contribution is the analytical and experimental study of shape factor influence on sapphire crystal growth by HDC method.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method

et al. 2020

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This research summarizes the analytical and experimental results of heat-transfer processes influence on defects formation during sapphire crystal growth by horizontal directed crystallization method (HDC). The shape of solid-melt interface significantly influences the process of sapphire crystals growth by this method. We receive the Stefan problem solution for sapphire crystals growth. It allows investigating the crystal growth process and the related factors (thermal stresses on different stages of growth process), their influence on defects formation. We investigate the main reasons for the formation of defective structures of the solid phase of sapphire crystals and the influence of thermal unit construction, the crystal geometry on the quality of the resulting sapphire crystal. We study the structure formation process, impurity distribution, and the nature of the defects in the crystal during it growth.

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Section: The Influence Of Thermal Processes On the Defects Formation mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method

et al. 2020

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“…The horizontal directed crystallization (HDC) method is one of the most widespread method for sapphire crystals growth from melt [6][7]. The growth speed of sapphire crystal by HDC method depends on the degree of overcooling of the phase transition surface, the heat and mass transfer in the crystal, melt and powder, the latent heat dissipation from the phase transition during crystallization [8,9].…”

Section: Introductionmentioning

confidence: 99%

An Analysis Approach to the Sapphire Crystals Growth by Horizontal Directed Crystallization Method

Klunnikova

Malyukov

Sayenko

et al. 2019

KEM

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The model for sapphire crystals growth parameters estimation has been suggested. It can be served as a basis for the analysis of heat transfer processes during sapphire crystals obtaining. It allows to predict the bubbles, stresses and cracks appearing during sapphire crystals growth. We describe the results of the analysis and parameters estimation of sapphire crystals growth on all stages by horizontal directed crystallization method.

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TRIZ and HDC sapphire growth process

Cited by 2 publications

References 0 publications

Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method

Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method

An Analysis Approach to the Sapphire Crystals Growth by Horizontal Directed Crystallization Method

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