Ab initio coupled-cluster, electron propagator,
and Møller–Plesset second-order perturbation theory calculations
are utilized to analyze the low-lying electronic states of several
metal-doped B20. In the ground state, the presently focused
AB20/EB20 (A = Li, Na, and K; E = Mg and Ca)
consist of charge-separated A+B20
–/E2+B20
2– frameworks. The
excited electronic states of AB20 and EB20
+ were analyzed by computing the vertical electron attachment
energies (VEAEs) of AB20
+ and EB20
2+. In several excited states, the radical electron is
predominantly localized on the B20 frames, which are counterparts
of the low-lying states of bare B20
–.
A variety of basis sets were tested on obtaining VEAEs, and the aug-cc-pVDZ/A,E d-aug-cc-pVDZ/B combination provided the best
accuracy–efficiency compromise on them. Furthermore, this work
analyzes the Rydberg-like excited states of AB20 and EB20
+ and will serve as a guide for future studies
on similar metal-doped boron systems.