Triple point and melting point of gallium

Astrov, D. N.; Razhba, N. A.; Razhba, Ya. E.

doi:10.1007/bf00867066

Cited by 3 publications

(2 citation statements)

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“…The strong Lewis acidity of Ga 3+ -salts, which tend to form stable complexes with electron donors, also hinders the reduction of Ga 3+ . In the case of Ga, the situation is even more difficult in comparison to other hard-to-reduce metals because the low melting point of 29.77 °C of elemental Ga impedes a controlled synthesis of nanostructured Ga-materials, due to the high tendency to coagulation of the liquid metal.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Catalytic Properties of Nanoparticulate Intermetallic Ga–Pd Compounds

et al. 2011

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A two-step synthesis for the preparation of single-phase and nanoparticulate GaPd and GaPd(2) by coreduction of ionic metal-precursors with LiHBEt(3) in THF without additional stabilizers is described. The coreduction leads initially to the formation of Pd nanoparticles followed by a Pd-mediated reduction of Ga(3+) on their surfaces, requiring an additional annealing step. The majority of the intermetallic particles have diameters of 3 and 7 nm for GaPd and GaPd(2), respectively, and unexpected narrow size distributions as determined by disk centrifuge measurements. The nanoparticles have been characterized by XRD, TEM, and chemical analysis to ensure the formation of the intermetallic compounds. Unsupported nanoparticles possess high catalytic activity while maintaining the excellent selectivity of the ground bulk materials in the semihydrogenation of acetylene. The activity could be further increased by depositing the particles on α-Al(2)O(3).

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Section: Introductionmentioning

confidence: 99%

Synthesis and Catalytic Properties of Nanoparticulate Intermetallic Ga–Pd Compounds

et al. 2011

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“…Raman spectra of electrodeposited films as a function of the electrodeposition temperature. The lower bound on the investigated temperature range was T = 40 o C to ensure that the Ga was molten during the deposition (T melt = 29.7 o C)[24]. All spectra possessed a discernible signal (above the background) consistent with the TO phonon mode for crystalline GaSb.…”

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confidence: 99%

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

DeMuth

Fahrenkrug

et al. 2016

Electrochimica Acta

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Direct electrodeposition of phase-pure crystalline gallium antimonide (GaSb) films has been achieved at low processing temperatures from an aqueous electrolyte. A liquid gallium electrode was used to drive the electroreduction of Sb 2 O 3 dissolved in 0.6 M NaOH. The quality and purity of the resultant films produced depended strongly on the chosen conditions, including temperature, time, and concentration of dissolved Sb 2 O 3. Under select conditions, the direct production of polycrystalline films of GaSb was possible. Raman spectroscopy, powder X-ray diffraction, selected area electron diffraction, scanning electron microscopy, and transmission electron microscopy were separately used to analyze the identity and crystallinity of the electrodeposited films. The cumulative data showed that this electrodeposition process followed the features common both to conventional electrodeposition and melt crystal growth. Accordingly, this electrodeposition process could not be categorized as electrodeposition followed by annealing. Rather, the data implicate this method is akin to a hybrid electrodeposition solution-based crystal growth, where crystalline GaSb films could be grown up to thicknesses of 1 µm in 60 min.

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Recommended values of temperature on the International Temperature Scale of 1990 for a selected set of secondary reference points

Bedford¹,

Bonnier²,

Maas³

et al. 1996

Metrologia

186

125

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Triple point and melting point of gallium

Cited by 3 publications

References 1 publication

Synthesis and Catalytic Properties of Nanoparticulate Intermetallic Ga–Pd Compounds

Synthesis and Catalytic Properties of Nanoparticulate Intermetallic Ga–Pd Compounds

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

Recommended values of temperature on the International Temperature Scale of 1990 for a selected set of secondary reference points

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