Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

Zhang, Lixin; McMahon, William E.; Liu, Y.; Cai, Yuan; Xie, Maohai; Wang, Naiyan; Zhang, S.B.

doi:10.1016/j.susc.2012.07.018

Cited by 4 publications

(1 citation statement)

References 41 publications

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“…One should mention that for such narrowspaced misfit dislocation networks the characterization of the dislocation types is ambigiuous in wurtzite materials. 29,30 Especially with dislocations running transversely to the projection direction causing a distortion of the high resolution pattern at the interface, which hinders a direct interpretation of the pattern in our case. However, the dislocation network can either occur due to relaxation above the critical thickness or as a result of the growth by DME.…”

Section: B Strainmentioning

confidence: 81%

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Budde

Remmele

Tschammer

et al. 2020

Journal of Applied Physics

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The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 • C and 850 • C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation NiO(110) || GaN(11.0) and NiO(101) || GaN(11.0), was observed by X-ray diffraction (XRD) and confirmed by in-situ reflection high-energy electron diffraction as well as transmission electron microscopy (TEM) and electron backscatter diffraction. With respect to the high lattice mismatch of 8.1 % and a measured low residual tensile layer strain, growth by lattice matching epitaxy or domain matching epitaxy is discussed. The morphology measured by atomic force microscopy showed a grainy surface, probably arising from the growth by the columnar rotational domains visible in TEM micrographs. The domain sizes measured by AFM and TEM increase with the growth temperature, indicating an increasing surface diffusion length. Growth at 850 • C, however, involved local decomposition of the GaN substrate that lead to an interfacial β-Ga 2 O 3 (201) layer and a high NiO surface roughness. Raman mesurements of the quasi-forbidden one-phonon peak indicate increasing layer quality (decreasing defect density) with increasing growth temperature. The results above suggest optimum growth temperatures around 700 • C for high layer and interface quality.

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Section: B Strainmentioning

confidence: 81%

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Budde

Remmele

Tschammer

et al. 2020

Journal of Applied Physics

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Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Chèze

Siekacz

Isa

et al. 2016

Journal of Applied Physics

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We investigate designed InN/GaN superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on c-plane GaN templates in situ by line-of-sight quadrupole mass spectroscopy and laser reflectivity, and ex situ by scanning transmission electron microscopy, X-ray diffraction, and photoluminescence (PL). The structural methods reveal concordantly the different interface abruptness of SLs resulting from growth processes with different parameters. Particularly crucial for the formation of abrupt interfaces is the Ga to N ratio that has to be bigger than 1 during the growth of the GaN barriers, as Ga-excess GaN growth aims at preventing the unintentional incorporation of In accumulated on the growth surface after the supply of InN, that extends the (In,Ga)N quantum well (QW) thickness. Essentially, even with GaN barriers grown under Ga-excess yielding to 1 monolayer (ML) thick QWs, there is a real discrepancy between the designed binary InN and the actual ternary (In,Ga)N ML thick QWs revealed by the above methods. The PL emission line of the sample with atomically abrupt interfaces peaks at 366 nm, which is consistent with the In content measured to be less than 10%.

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Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films

et al. 2018

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Although selective area growth (SAG) and coalesced SAG (cSAG) have been utilized extensively for many years to moderate the material quality of lattice-mismatched films, the geometrical factors controlling dislocations in coalesced films are difficult to visualize, and some confusion regarding the topology of dislocations for cSAG still persists. In this paper, we describe the topology of dislocations during island coalescence for cSAG, framed in terms of fundamental dislocation properties and virtual dislocations, which are used as a helpful visualization tool. We also show how the results and methods are generally applicable to coalescence of any other epitaxial film.

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Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

Cited by 4 publications

References 41 publications

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films

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