Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

Haruyama, Moriyoshi; Onoda, Shinobu; Higuchi, Taisei; Kada, Wataru; Chiba, Ayano; Hirano, Yoshimi; Teraji, Tokuyuki; Igarashi, Ryuji; Kawai, Sunao; Kawarada, Hiroshi; Ishii, Yukihiro; Fukuda, Ryosuke; Takenaka, Takashi; Isoya, Junichi; Ohshima, Takeshi; Hanaizumi, Osamu

doi:10.1038/s41467-019-10529-x

Cited by 42 publications

(31 citation statements)

References 48 publications

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“…Over the last few decades, significant efforts have been committed to the deterministic creation of colour centres in solidstate host materials by ion implantation [20][21][22][23][24][25][26][27] . While the technique is well established, there are fundamental constraints which limit its application in nanotechnology realisations.…”

mentioning

confidence: 99%

Versatile direct-writing of dopants in a solid state host through recoil implantation

et al. 2020

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Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices.

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confidence: 99%

Versatile direct-writing of dopants in a solid state host through recoil implantation

et al. 2020

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“…[ 36 ] For some applications, the implantation of N 2 molecules can as well provide very small distance between the two nitrogen atoms, or the use of larger molecules such as adenine may enable a genuine defect engineering. [ 37 ] However, all these methods provide only an average number of ions estimated from the ion current and implantation time.…”

Section: Toward Deterministic Ion Implantation With High Spatial Resomentioning

confidence: 99%

Charge‐Assisted Engineering of Color Centers in Diamond

Lühmann

Meijer

Pezzagna

2021

Physica Status Solidi (a)

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Owing to its unique optical and spin properties, the nitrogen‐vacancy (NV) center holds the promise of a diamond‐based room‐temperature scalable quantum computer, but the numerous technical and physical issues are not yet overcome, especially the poor N to NV conversion. The NV and other color centers are, however, successfully used as multitasking quantum sensors, and open new routes in quantum sensing technologies. Most recently, several breakthroughs and demonstrations were achieved, shedding a new light on the feasibility of a NV‐based quantum computer. Herein, the recently developed method of charge‐assisted single defect engineering is reviewed. With a controlled charging of the involved species, it modifies the diffusion or kinetics of defect formation and acts as a catalyzer of the NV creation while hindering the formation of competing and perturbing defects such as divacancies or NVH. Very high NV creation yields up to 75% are obtained and the method is suitable to other impurity‐vacancy defects. Furthermore, it has positive consequences on the charge state stability and coherence time of the NV centers, which is as well discussed. Together with the possibility to nowadays deterministically implant single ions, this powerful method brings the scalability of NV qubits closer.

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“…More and more single color centers with different atom impurities have been prepared in the diamond by this method, like lead-related single color centers [24] and single SnV color centers [67]. Besides, entanglement between NV pairs [68] and strongly coupled triple NV centers [69] were achieved by ion implantation, which can be further extended to prepare integrated quantum devices by combining high-resolution ion implantation [64].…”

Section: Ion Implantationmentioning

confidence: 99%