Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System

Priya, G. Lakshmi; Venkatesh, M.; Balamurugan, N. B.; Samuel, T. S. Arun

doi:10.1007/s12633-021-01075-7

Cited by 17 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The bitlines have a high value of the capacitive load, which in turn offers RC delays. The recent SRAM designs [ 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ] reported depict the novel device architectures of 6T SRAM with FinFET, Memristor, and Junctionless TFETs, to claim it to be a low-power device. Here, with our proposed sense amplifier design, the power reduction techniques like negative wordline and source biasing were combined and utilized.…”

Section: Proposed Sense Amplifier: Results and Discussionmentioning

confidence: 99%

Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

et al. 2023

Self Cite

View full text Add to dashboard Cite

We live in a technologically advanced society where we all use semiconductor chips in the majority of our gadgets, and the basic criterion concerning data storage and memory is a small footprint and low power consumption. SRAM is a very important part of this and can be used to meet all the above criteria. In this study, LTSpice software is used to come up with a high-performance sense amplifier circuit for low-power SRAM applications. Throughout this research, various power reduction approaches were explored, and the optimal solution has been implemented in our own modified SRAM design. In this article, the effect of power consumption and the reaction time of the suggested sense amplifier were also examined by adjusting the width-to-length (W/L) ratio of the transistor, the power supply, and the nanoscale technology. The exact amount of power used and the number of transistors required by different approaches to better comprehend the ideal technique are also provided. Our proposed design of a low-power sense amplifier has shown promising results, and we employ three variations of VLSI power reduction techniques to improve efficiency. Low-power SRAMs embrace the future of memory-centric neuromorphic computing applications.

show abstract

Section: Proposed Sense Amplifier: Results and Discussionmentioning

confidence: 99%

Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…It is based on Moore’s law, which stipulates that every two years the count of transistors on a particular region of silicon becomes twice. FinFET’s appeal stems from its lower leakage current, higher performance, and a variety of implementation techniques including the usage of Tunnel FETs and Junctionless Tunnel FETs were also used in the literature for the SRAM design [ 8 , 9 , 10 , 11 ]. Scaling down, according to Moore’s law, provides a high integration density on the chip and aids in the management of the short channel effect.…”

Section: Implementation Of 6t-sram Using Cmos Finfet and Memristormentioning

confidence: 99%

Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell

et al. 2023

Self Cite

View full text Add to dashboard Cite

Maintaining power consumption has become a critical hurdle in the manufacturing process as CMOS technologies continue to be downscaled. The longevity of portable gadgets is reduced as power usage increases. As a result, less-cost, high-density, less-power, and better-performance memory devices are in great demand in the electronics industry for a wide range of applications, including Internet of Things (IoT) and electronic devices like laptops and smartphones. All of the specifications for designing a non-volatile memory will benefit from the use of memristors. In addition to being non-volatile, memristive devices are also characterized by the high switching frequency, low wattage requirement, and compact size. Traditional transistors can be replaced by silicon substrate-based FinFETs, which are substantially more efficient in terms of area and power, to improve the design. As a result, the design of non-volatile SRAM cell in conjunction with silicon substrate-based FinFET and Metal Insulator Metal (MIM) based Memristor is proposed and compared to traditional SRAMs. The power consumption of the proposed hybrid design has outperformed the standard Silicon substrate FinFET design by 91.8% better. It has also been reported that the delay for the suggested design is actually quite a bit shorter, coming in at approximately 1.989 ps. The proposed architecture has been made significantly more practical for use as a low-power and high-speed memory system because of the incorporation of high-K insulation at the interface of metal regions. In addition, Monte Carlo (MC) simulations have been run for the reported 6T-SRAM designs in order to have a better understanding of the device stability.

show abstract

“…As new technology equips quantum devices with more potential advanced usages and applications [1][2][3][4], the current knowledge has reached its limitation. More studies have begun to extend this limitation to the edge of the microscopic world [5][6][7][8]. To seek the underlying physics and mechanism of tunneling, various approaches have been studied [9][10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Tunneling Quantum Dynamics in Ammonia

Yang

Han

2021

IJMS

View full text Add to dashboard Cite

Ammonia is a well-known example of a two-state system and must be described in quantum-mechanical terms. In this article, we will explain the tunneling phenomenon that occurs in ammonia molecules from the perspective of trajectory-based quantum dynamics, rather than the usual quantum probability perspective. The tunneling of the nitrogen atom through the potential barrier in ammonia is not merely a probability problem; there are underlying reasons and mechanisms explaining why and how the tunneling in ammonia can happen. Under the framework of quantum Hamilton mechanics, the tunneling motion of the nitrogen atom in ammonia can be described deterministically in terms of the quantum trajectories of the nitrogen atom and the quantum forces applied. The vibrations of the nitrogen atom about its two equilibrium positions are analyzed in terms of its quantum trajectories, which are solved from the Hamilton equations of motion. The vibration periods are then computed by the quantum trajectories and compared with the experimental measurements.

show abstract

Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System

Cited by 17 publications

References 30 publications

Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell

Tunneling Quantum Dynamics in Ammonia

Contact Info

Product

Resources

About