2006
DOI: 10.1115/1.2735346
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Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges

Abstract: This paper gives a review of the work performed in the framework of the EC-funded project FULLSPECTRUM aiming for higher photovoltaic (PV) conversion efficiencies by investigating GaInP∕GaInAs∕Ge triple-junction concentrator solar cells. Lattice mismatched structures reached efficiencies beyond 35% at 600 sun concentration level. These cells are now ready to enter the terrestrial PV market. The perspectives and challenges associated with the market introduction of these cells are addressed. Specifically issues… Show more

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Cited by 29 publications
(14 citation statements)
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“…The multijunction approach has been described extensively in the literature. [6][7][8][11][12][13][14][15][16][17][18][19][20] The exact structure has not been published, probably GaInP-GaAs dilute nitride, all lattice matched GaInP/Ga(In)As/GaInAs [3,4] 42.6% @ 327 suns (NREL) (40.9% @ 1093 suns)…”
Section: Part I High-concentration Cpv Using High-efficiency Multijmentioning
confidence: 99%
“…The multijunction approach has been described extensively in the literature. [6][7][8][11][12][13][14][15][16][17][18][19][20] The exact structure has not been published, probably GaInP-GaAs dilute nitride, all lattice matched GaInP/Ga(In)As/GaInAs [3,4] 42.6% @ 327 suns (NREL) (40.9% @ 1093 suns)…”
Section: Part I High-concentration Cpv Using High-efficiency Multijmentioning
confidence: 99%
“…Typically, solar simulators based on multiple pulsedlight sources with flash durations of the order of a few milliseconds (in order to prevent cell heating) are used in concert with spectral filters [4][5][6]. The alternative of real-sun continuous-irradiation measurements has been reported [7][8][9][10], but could not avoid unwanted cell heating at irradiance levels above~1000 suns.…”
Section: Introductionmentioning
confidence: 99%
“…It is well known that a typical monolithic 3JSC device has three stacks of cells with different bandgaps, which are connected by wide bandgap tunnel junctions 18 24 25 . The nearly 20 layers in a 3JSC are normally fabricated by molecular organic chemical vapour deposition (MOCVD) 27 . Although the GaInP/GaInAs/Ge 3JSC has been commercialised and already applied to CPV, the structural details, including specific layer thickness, material component and doping parameters, are not in the public domain.…”
Section: Jsc Structure and Simulationmentioning
confidence: 99%