Triple Gate Oxide by Nitrogen Implantation Integrated in a 0.13um CMOS Flow

Carrere, J.-P.; Grouillet, A.; Guyader, F.; Beverina, A.; Bidaud, M.; Halimaoui, A.

doi:10.1109/essderc.2002.194893

Cited by 2 publications

(4 citation statements)

References 2 publications

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“…This is, of course, a very challenging task since implantation energy and dose as also post -implantation annealing approach should be carefully chosen in order to surpass channel mobility degradation drawbacks. 17 Finally the study of common dopants -nitrogen co-implantation and subsequent annealing in Ge would be of particular interest in terms of dopant diffusion suppression and/or activation. Germanium MOS technology faces the problems of fast n-type dopant (P, As) diffusion and clustering phenomena leading to deactivation of n and p-type dopants with high solubility limit such as gallium.…”

Section: Discussionmentioning

confidence: 99%

“…15,16,18 This individual diffusion behavior found also a variety of applications in Si MOS technology. 13,14,17,18,19 However, such a study in the case of germanium is, to our knowledge, still missing.…”

mentioning

confidence: 99%

“…In this context the study of anomalous diffusion phenomena of implanted species (apart for common dopants) could monitor indirectly Ge point defects kinetics and interactions with the Ge surface or thin films/Ge interfaces for an understanding of fundamental Ge point defects properties. Nitrogen implantation and diffusion in inert and oxidizing ambient has been extensively studied in silicon [13][14][15][16][17][18][19][20][21][22] where anomalous (non-Fickian) diffusion phenomena takes place at temperatures above 700 • C. Diffusion occurs toward the free Si surface or a SiO 2 /Si interface and is attributed to nitrogen atoms -Si z E-mail: dskar@physics.upatras.gr interstitials interactions as also to the interaction of Si interstitilas with the free Si surface or the SiO 2 /Si interface. 15,16,18 This individual diffusion behavior found also a variety of applications in Si MOS technology.…”

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confidence: 99%

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Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

Skarlatos

Bersani²,

Barozzi³

et al. 2012

ECS J. Solid State Sci. Technol.

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In the present work nitrogen (N2+) has been implanted in crystalline germanium at a constant dose and its diffusion has been studied as a function of implantation energy, annealing temperature and various capping layers deposited on substrate surface. Nitrogen diffusion in germanium appears to be, as in the case of silicon, anomalous toward the capping layer/germanium interface not obeying the second Fick's law. In addition, it appears independent on the capping layer composition. As the implantation energy increases, characteristic nitrogen pileups appear in the region beyond the former amorphous/crystalline interface, attributed to the formation of nitrogen-Ge point defects (in particular interstitials) clusters. There is an evidence that N diffusion in Ge is related to the presence of Ge interstitials gradients maintained during post-implantation annealing between the capping layer/Ge interface and the region beyond the former amorphous/crystalline interface of the substrate. This unique diffusion behavior of N could find applications in Ge based MOS (Metal-Oxide-Semiconductor) technology as proposed in the body of the present article.

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

Skarlatos

Bersani²,

Barozzi³

et al. 2012

ECS J. Solid State Sci. Technol.

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“…In this work, pre-gate-nitrogen-implant (PGNI) is used to grow dual gate oxides for SoC applications by slowing down the gate oxide growth on the areas implanted with nitrogen [3], [9]. Physical and electrical properties of the nitrogen implanted gate oxides are investigated.…”

Section: Introductionmentioning

confidence: 99%

A study of nitrogen peak location in gate oxides grown on nitrogen implanted substrates and its impact on boron penetration

Mirabedini¹,

Kamath²,

Yeh³

2003

IEEE Electron Device Lett.

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This work investigates properties of gate oxides grown on nitrogen-implanted substrates. It was demonstrated that the location of nitrogen peak in the gate oxide, once fixed at the beginning of the oxidation step, does not change with continued oxidation. Using this property, nitrogen peak was engineered near the gate oxide interface with substrate and was shown to suppress boron penetration more effectively without any significant degradation of the channel mobility in comparison to the case where the nitrogen peak is located within the bulk of the gate oxide.

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Triple Gate Oxide by Nitrogen Implantation Integrated in a 0.13um CMOS Flow

Cited by 2 publications

References 2 publications

Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

A study of nitrogen peak location in gate oxides grown on nitrogen implanted substrates and its impact on boron penetration

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