“…However, this modification results in a higher breakdown voltage, that increases from about 35 V for a thin SPAD up to 70 V for a RE‐SPAD, and in a larger overvoltage, that increases from a few volt up to 20 V. In order to fully accommodate such higher voltages it is necessary, on the one hand, to avoid the edge breakdown by introducing guard rings around the cathode diffusion and, on the other hand, to increase the breakdown voltage of the substrate junction by interposing a lightly‐doped n‐layer between the n+ substrate and the p+ buried layer. Moreover, this additional layer reduces also the capacitive parasitics of the junction, [ 73 ] with beneficial effects in terms of both timing jitter and afterpulsing. Unfortunately, the increased thickness of the quasi‐intrinsic layer also prevents the n+ isolation from reaching the n+ substrate, resulting in a SPAD that is no more electrically isolated from the rest of the substrate and, thus, that can not be employed in detector arrays of fully independent pixels.…”