Triple cation perovskite doped with the small molecule F4TCNQ for highly efficient stable photodetectors

Abstract

An appropriate amount of F4TCNQ enhances the grain size and reduces grain boundaries with high performance and high stability.

Examining the Interfacial Defect Passivation with Chlorinated Organic Salt for Highly Efficient and Stable Perovskite Solar Cells

“…Organic–inorganic hybrid lead halide perovskite materials have been widely used to develop various types of optoelectronic applications, such as solar cells, light‐emitting diodes, lasers, humidity/photodetectors, photocatalysis, and so on. [ 1–5 ] Perovskite solar cells (PSCs) are considered to be an excellent emerging technology for the next generation thin‐film photovoltaic due to their promising optoelectronic characteristics, including high optical absorption coefficient, large carriers’ diffusion lengths, tunable bandgap, and lower exciton binding energy, etc. [ 6–10 ] Owing to regulating different compositions of perovskite materials, device configurations, and deposition techniques, the device performance of PSCs remarkably improved from 3.8% to the updated certified value of 25.2%, competing the performance of commercialized silicon solar cells.…”

Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

“…In other words, the low dark current in the D4 photodetector is caused by the extra depletion regions at the two interfaces introduced by GO layer, which leads to the narrowing of the conducting region [35]. As shown in Figure 4b, the photocurrent measured for D1 (without GO) device was 4.19 × 10 −8 A, while the photocurrent of D4 (with GO) device was 2.02 × 10 −7 A at V = 5 V. The high photocurrent for the D4 photodetector device is due to the heterojunctions created between the perovskite/graphene oxide and graphene oxide/TiO 2 , which helps the efficient charge transfer, as discussed above [42,43]. As the heterojunction spatially separates the holes and electrons, the hole remains in the perovskite layer, while the TiO 2 ETL layer catches the electrons efficiently.…”

Simple Additive to MAPbI3 Solution that Enhances Film Quality of Mini‐Module Perovskite Solar Cells Fabricated under Moderate Humidity

“…The C 12 F 4 N 4 molecule is an effective p-type dopant because its strong ability of electron acceptance leads to enhance the electrical conductivity. [25] Here, we report on this molecule as an additive to occupy the trap site in the perovskite grain boundaries to avoid moisture contamination during and after fabrication of devices. [25] A report by Azam et al suggested that charge carriers become trapped at the grain boundaries of perovskite film; the more these defective grain boundaries are exposed to moisture, the greater is the degradation of the PSC device.…”

“…[25] Here, we report on this molecule as an additive to occupy the trap site in the perovskite grain boundaries to avoid moisture contamination during and after fabrication of devices. [25] A report by Azam et al suggested that charge carriers become trapped at the grain boundaries of perovskite film; the more these defective grain boundaries are exposed to moisture, the greater is the degradation of the PSC device. [26] A study by Khan et al reported that the C 12 F 4 N 4 additive significantly reduced the grain boundaries in the triple cation DOI: 10.1002/solr.202100826…”

“…perovskite active layer. [25] Another researcher, Guan et al, suggested that the tetraethyl orthosilicate additive can substantially reduce the trap defects located in the grain boundaries of MAPbI 3 . [27] The passivation of the additive into the perovskite grain boundaries presents a new path for controlling the growth and morphology of perovskite film fabrication under a humid atmosphere.…”