Trilayer hard mark lithography and etch for BEOL manufacturing

Panneerchelvam, Prem; Huard, Chad M.; Agarwal, Ankur; Pret, Alessandro Vaglio; Mani, Antonio; Gronheid, Roel; Demand, Marc; Kumar, Kaushik

doi:10.1117/12.2614095

Cited by 7 publications

(7 citation statements)

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“…The three-dimensional Monte Carlo-based feature scale etch model developed at KLA, ProETCH, is used in this study and the detailed descriptions are in Refs. [3,4]. The Monte Carlo techniques are used to describe interactions of reactive species from the plasma with the surface and associated kinetics.…”

Section: Descriptions Of the Modelmentioning

confidence: 99%

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Process optimization for shallow trench isolation etch using computational models

Huang¹,

Panneerchelvam²,

Huard³

et al. 2023

Advanced Etch Technology and Process Integration for Nanopatterning XII

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In today’s advanced semiconductor process manufacturing, critical dimensions of device features have decreased to a few nanometers while the aspect ratios have increased beyond 100. The cost of process development has significantly increased and the performance of the lithography and plasma etch patterning processes are critical to the success of ramping a new technology node toward profitable high-volume manufacturing. In this paper, a three-dimensional Monte Carlo-based feature scale model, ProETCH®, has been developed for modeling etch process with the capability of optimizing the process by solving forward and inverse problems. The shallow trench isolation etch process in self-aligned double patterning was investigated. The mechanism of silicon etch by Ar/Cl2 plasma was developed with experimental data as a reference. The developed model captures the trends and has quantitative accuracy in comparison to the experimental data, and can be used to identify the different fundamental pathways which contribute to the profile metrics. The developed model was then used to solve the forward problem, which is to predict profiles at different process conditions, and the inverse problem, which is to search for the process conditions (e.g, power and pressure) which could result in desirable profiles.

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Section: Descriptions Of the Modelmentioning

confidence: 99%

“…Besides, ProETCH can also be used together with the rigorous physics-based lithography model developed at KLA, PROLITH TM , for various use cases in semiconductor processing control such as EUV patterning, optical proximity correction (OPC), and Litho-Etch-Litho-Etch (LELE) process optimization, etc. [3,4]…”

Section: Descriptions Of the Modelmentioning

confidence: 99%

Process optimization for shallow trench isolation etch using computational models

Huang¹,

Panneerchelvam²,

Huard³

et al. 2023

Advanced Etch Technology and Process Integration for Nanopatterning XII

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“…A natural question may come up as what happens to the trench width after optimizing the etch tool recipe for overlay. Etch conditions are known to have impact on LE bias [11,12]. To monitor the impact of the etch step on the width of trench features, SEM measurements are done at ADI and AEI.…”

Section: Trench Width Behavior After Improving the Etch-induced Intra...mentioning

confidence: 99%

“…The etch process transfers the resist pattern, but also introduces additional variability known as lithography to etch (LE) bias [11,12]. SOG etch step was also found to be the main contributor for LE bias [12] which motivated us to check the width of trench features for optimized and Process of Record (POR) etch cases before and after etch.…”

Section: Introductionmentioning

confidence: 99%

Improving the on-product overlay performance after optimization of the etch-induced contributions

Yildirim,

van Haren,

Mouraille

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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“…The proposed optimization method in this paper is based on these two methods. In addition, considering the successful application of the physical CAR models in simulation, 17 – 22 it is convenient to apply these models to predict the critical features’ sizes of the CAR profile, and it will accelerate the optimization in a cheaper and faster way 18 . For these reasons, the simulation part of this work is based on the rigorous CAR model in PROLITH 23 .…”

Section: Introductionmentioning

confidence: 99%

Optimization of chemically amplified resist formulation based on simple random sampling and kernel density estimation

Kong

Dong

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

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Formulation optimization plays an important role in the research and development of chemically amplified resist (CAR). However, the CAR profile after development process is influenced by multiple resist parameters and process conditions, so it is hard to determine the optimal CAR formulation in the multivariate problem. An optimization method for the CAR formulation is developed. The simple random sampling is applied to each CAR parameter's value range independently, and the combinations of these samples from different parameters are used in the simulation of lithography profiles. Kernel density estimation is applied to analyze the simulation results. Then the CAR formulation is optimized based on the probability density distribution from the analysis results. The verification results show that the proposed optimization method can greatly improve the stability of the CAR formulation and thus generating acceptable critical features' sizes of the CAR profile.

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Trilayer hard mark lithography and etch for BEOL manufacturing

Cited by 7 publications

References 0 publications

Process optimization for shallow trench isolation etch using computational models

Process optimization for shallow trench isolation etch using computational models

Improving the on-product overlay performance after optimization of the etch-induced contributions

Optimization of chemically amplified resist formulation based on simple random sampling and kernel density estimation

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