2021
DOI: 10.1039/d1ta01233a
|View full text |Cite
|
Sign up to set email alerts
|

Tribodiffusion-driven triboelectric nanogenerators based on MoS2

Abstract: Recently, dynamic Schottky diode or p-n junction-based triboelectric nanogenerators (TENGs) which generate direct current were reported. However, most of them exhibited low output voltage because their semiconducting friction layers were...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(3 citation statements)
references
References 61 publications
0
3
0
Order By: Relevance
“…The semiconductor–semiconductor TENG needs two oppositely doped semiconductors or ones with different chemical potential to generate triboelectric current, its working principle being based on the formation of the p–n junction across the contacted surfaces . The work function of the semiconductor is connected with the electric affinity, which is a fixed value, and the doped concentration, which influences the final value of the work function, while a metal has a constant Fermi level .…”
Section: Semiconductor–semiconductor Tengmentioning
confidence: 99%
See 1 more Smart Citation
“…The semiconductor–semiconductor TENG needs two oppositely doped semiconductors or ones with different chemical potential to generate triboelectric current, its working principle being based on the formation of the p–n junction across the contacted surfaces . The work function of the semiconductor is connected with the electric affinity, which is a fixed value, and the doped concentration, which influences the final value of the work function, while a metal has a constant Fermi level .…”
Section: Semiconductor–semiconductor Tengmentioning
confidence: 99%
“…The semiconductor−semiconductor TENG needs two oppositely doped semiconductors or ones with different chemical potential to generate triboelectric current, its working principle being based on the formation of the p−n junction across the contacted surfaces. 108 The work function of the semiconductor is connected with the electric affinity, which is a fixed value, and the doped concentration, which influences the final value of the work function, while a metal has a constant Fermi level. 109 When two semiconductors consisting of a p-type semiconductor with a lower Fermi level (or a larger work function) and an n-type semiconductor with a higher Fermi level (or a smaller work function) are in contact, the p-type semiconductor energy band bends downward while the n-type semiconductor energy band bends upward, forming a p−n junction at the interface along with nonequilibrium carrier diffusion due to the chemical potential difference.…”
Section: Semiconductor−semiconductor Tengmentioning
confidence: 99%
“…The triboelectric layer is generally regarded as a double-layer capacitor in the power generation process; the dielectric property of the triboelectric layer has an impact on the output performance. Thus, many measures have been adopted to improve the dielectric properties, such as the use of ferroelectrics and polycompounds with high dielectric constants. , Meanwhile, the reduction of the effective thickness of the triboelectric layer increases the capacity of the double-layer capacitor, which is also an effective way to improve the dielectric properties.…”
Section: Introductionmentioning
confidence: 99%