2017
DOI: 10.1103/physrevlett.118.025701
|View full text |Cite
|
Sign up to set email alerts
|

Triaxial-Stress-Induced Homogeneous Hysteresis-Free First-Order Phase Transformations with Stable Intermediate Phases

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

10
52
0

Year Published

2017
2017
2019
2019

Publication Types

Select...
4
4

Relationship

5
3

Authors

Journals

citations
Cited by 42 publications
(62 citation statements)
references
References 35 publications
10
52
0
Order By: Relevance
“…This potential has been demonstrated to be successful in describing the crystal structure transition from the diamond-cubic to β-Sn in single crystal silicon (Si I to Si II) under a uniaxial stress of ∼12GPa (see [22] and current results), which is close to the experimental value [23]. Advantage of the the Tersoff interatomic potential for the description of Si I to Si II PT in comparison with four other potentials is demonstrated in [24]. The majority of simulations have been performed for a Si sample containing 64,000 atoms.…”
Section: Simulation Methodssupporting
confidence: 74%
“…This potential has been demonstrated to be successful in describing the crystal structure transition from the diamond-cubic to β-Sn in single crystal silicon (Si I to Si II) under a uniaxial stress of ∼12GPa (see [22] and current results), which is close to the experimental value [23]. Advantage of the the Tersoff interatomic potential for the description of Si I to Si II PT in comparison with four other potentials is demonstrated in [24]. The majority of simulations have been performed for a Si sample containing 64,000 atoms.…”
Section: Simulation Methodssupporting
confidence: 74%
“…There is an infinite number (continuum) of the homogeneous intermediate phases along the homogeneous Si I↔Si II path which are in indifferent thermodynamic equilibrium. These results are in good agreement with the MD results in Levitas et al (2017a). The effect of the hysteresis width of the nanostructure evolution and the distribution of the driving force for PT was analyzed in Section 5.…”
Section: Introductionsupporting
confidence: 82%
“…7, despite considering a heterogeneous initial perturbation for the order parameter, the system undergoes a unique homogeneous and hysteresis-free first order PT with no nucleation and two-phase band formation and growth. The same behavior was observed in MD simulations for Si I↔Si II PTs for such stress states at which the instability lines for direct and reverse PTs coincide (Levitas et al (2017a)). To give a simple geometric and energetic interpretation of this phenomenon, we consider small strains and will operate with the Gibbs energy per unit volume for homogeneous states G(σ σ σ, η, θ) = ψ(ε ε ε, η, θ) − σ σ σ: : :ε ε ε, the same as what was done in Levitas and Preston (2002a).…”
Section: Accepted Manuscriptsupporting
confidence: 73%
“…This seemed to be impossible due to the large number of combinations, but unexpected guidance came from the PT criterion analytically formulated within the large-strain phase field approach (PFA) 33) under action of all six stresses · ij . Molecular dynamics simulations 34,35) and the first-principle simulations 36) were then performed to find lattice instability conditions for cubic-totetragonal PT between diamond cubic phase Si I and metallic phase Si II, in both directions. The results for Si I ¼ Si II PT obtained with molecular dynamics and first-principle simulations are quite close.…”
Section: Crystal Lattice Instability Criteria: Phase Fieldmentioning
confidence: 99%
“…Phase transformation criteria in terms of stress · 3 vs. · 1 = · 2 for direct (D) Si I-to-Si II and reverse (R) Si II-to-Si I phase transformations from the first-principle simulations and molecular dynamics simulations,34,35) as well as the metallization criterion from the first-principle simulations. This figure is reproduced with permission from Ref 36…”
mentioning
confidence: 99%