Triaxial magnetic anisotropy in the two-dimensional ferromagnetic semiconductor CrSBr

Yang, Kè; Wang, Guangyu; Liu, Lu; Lü, Di; Wu, Hua

doi:10.1103/physrevb.104.144416

Cited by 79 publications

(108 citation statements)

References 39 publications

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“…Rather uncommonly, the relatively large low-temperature conductivity -which confirms the presence of sizable non-intentional doping-coexists with a bright fluorescence observed in photoluminescence experiments (see Figure 1e) [24]. Additionally, the same band structure calculations (see Figure 1b) predicting a large bandwidth also show an extremely pronounced anisotropy: the bandwidth is about 1.5 eV in the Γ − Y (which corresponds to the crystallographic b-axis), but nearly vanishes in the perpendicular Γ − X direction (i.e., in the a-direction) [24,25]. Even though this prediction is somewhat surprising, because no obvious pronounced anisotropy can be identified in the atomic structure of the material (see Figure 1a), indications of anisotropy (see Figure 1e) were indeed found when measuring the photoluminescence polar- ization dependence [24].…”

Section: Introductionsupporting

confidence: 53%

“…CrSBr has been recently identified as an extremely interesting 2D magnetic semiconductor, rather unique because the width of its bands is approximately 1.5 eV or larger, i.e., 50-100 times larger than that of other semiconducting 2D magnetic materials that have been recently studied [7,24,25]. Earlier work has mainly focused on the magnetic properties of the material, exploiting the fact that the large bandwidth results in a conductivity that is also sufficiently large to remain measurable at low temperature, well below the magnetic transition temperature.…”

Section: Discussionmentioning

confidence: 99%

“…CrSBr [22] (see Figure 1a) -a recently introduced 2D magnetic semiconductorappears to be an exception [23,24]. First-principles calculations (shown in Figure 1b) predict its conduction band to have a width of approximately 1.5 eV [24,25]. Accordingly, low-temperature in-plane magnetoresistance measurements (see Figure 1c and d) could be performed successfully, and analyzed to determine the magnetic phase diagram [23].…”

Section: Introductionmentioning

confidence: 99%

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Quasi 1D electronic transport in a 2D magnetic semiconductor

Wu,

Gutiérrez-Lezama,

Lopéz-Paz

et al. 2022

Preprint

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We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities σa and σ b on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σ b /σa ≈ 3 • 10 2 − 10 5 at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology -together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements-indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties.

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Section: Introductionsupporting

confidence: 53%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Quasi 1D electronic transport in a 2D magnetic semiconductor

Wu,

Gutiérrez-Lezama,

Lopéz-Paz

et al. 2022

Preprint

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“…Furthermore, in such mixed-anion compounds 21 , the relative arrangement of the heavy halides allows for a specific modification of the magnetic interactions by a targeted control of the magnetic anisotropy. In this line, the antiferromagnetic (AFM), mixed-anion, van der Waals material CrSBr 22 stands out by combining a sizeable direct band gap of ∆E ≈ 1.8 eV with an exceptionally large band-width 23,24 , and thus an expected high carrier mobility 25 . Furthermore, CrSBr exhibits a substantial air-stability and a high magnetic critical temperature of T N ≈ 133 K in bulk, predicted to be even higher in the monolayer [24][25][26] .…”

Section: Introductionmentioning

confidence: 99%

“…In this line, the antiferromagnetic (AFM), mixed-anion, van der Waals material CrSBr 22 stands out by combining a sizeable direct band gap of ∆E ≈ 1.8 eV with an exceptionally large band-width 23,24 , and thus an expected high carrier mobility 25 . Furthermore, CrSBr exhibits a substantial air-stability and a high magnetic critical temperature of T N ≈ 133 K in bulk, predicted to be even higher in the monolayer [24][25][26] . A substantial magnetoresistance has been indeed demonstrated below the ordering temperature 27 .…”

Section: Introductionmentioning

confidence: 99%

Dynamic Magnetic Crossover at the Origin of the Hidden-Order in van der Waals Antiferromagnet CrSBr

López-Paz,

Guguchia,

Pomjakushin

et al. 2022

Preprint

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The van der Waals material CrSBr stands out as a promising two-dimensional magnet. Especially, its high magnetic ordering temperature and versatile magneto-transport properties make CrSBr an important candidate for new devices in the emergent field of two-dimensional magnetic materials. To date, the magnetic and structural properties of CrSBr have not been fully elucidated. Here, we report on the detailed temperature-dependent magnetic and structural properties of this material, by comprehensively combining neutron scattering, muon spin relaxation spectroscopy, synchrotron X-ray diffraction, and magnetization measurements. We evidence that this material undergoes a transition to an A-type antiferromagnetic state below T N ≈ 140 K, with a pronounced two-dimensional character as deduced from the determined critical exponent of β ≈ 0.18. In our analysis of the field-induced metamagnetic transition, we find that the ferromagnetic correlations within the monolayers persist clearly above the Néel temperature in this material. Furthermore, we unravel the low-temperature (i.e. T < T N ) magnetic hidden order within the long-range magnetically ordered state. We find that it is associated to a slowing down of the magnetic fluctuations, accompanied by a continuous reorientation of the internal magnetic field. These take place upon cooling below T s ≈ 100 K, until a spin freezing process occurs at T * ≈ 40 K. We argue this complex dynamic behavior to reflect a magnetic crossover driven by the in-plane uniaxial anisotropy, which is ultimately caused by the mixed-anion character of the material. Our findings indicate that the magnetic and structural properties of CrSBr widen its potential application as a component for spin-based electronic devices.

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Revealing 2D Magnetism in a Bulk CrSBr Single Crystal by Electron Spin Resonance

Moro

Águila

et al. 2022

Adv Funct Materials

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2D magnets represent material systems in which magnetic order and topological phase transitions can be observed. Based on these phenomena, novel types of computing architectures and magnetoelectronic devices can be envisaged. Unlike conventional magnetic films, their magnetism is independent of the substrate and interface qualities, and 2D magnetic properties manifest even in formally bulk single crystals. However, 2D magnetism in layered materials is rarely reported often due to weak exchange interactions and magnetic anisotropy, and low magnetic transition temperatures. Here, the electron spin resonance (ESR) properties of a layered antiferromagnetic CrSBr single crystal are reported. The W‐like shape angular dependence of the ESR linewidth provides a signature for room temperature spin–spin correlations and for the XY spin model. By approaching the Néel temperature the arising of competing intralayer ferromagnetic and interlayer antiferromagnetic interactions might lead to the formation of vortex and antivortex pairs. This argument is inferred by modeling the temperature dependence of the ESR linewidth with the topological Berezinskii‐Kosterlitz‐Thouless phase transition. These findings together with the chemical stability and semiconducting properties, make CrSBr a promising layered magnet for future magneto‐ and topological‐electronics.

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Triaxial magnetic anisotropy in the two-dimensional ferromagnetic semiconductor CrSBr

Cited by 79 publications

References 39 publications

Quasi 1D electronic transport in a 2D magnetic semiconductor

Quasi 1D electronic transport in a 2D magnetic semiconductor

Dynamic Magnetic Crossover at the Origin of the Hidden-Order in van der Waals Antiferromagnet CrSBr

Revealing 2D Magnetism in a Bulk CrSBr Single Crystal by Electron Spin Resonance

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