Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation

Abstract

The generation of a triangular and rectangular shaped beam is very useful in increasing throughput for writing ULSI patterns which often include many oblique lines. To make use of these shaped beams in ULSI pattern formation, a new rectangular and triangular shaped beam calibration method has been developed on the EB exposure system EX-7. The shaped beam calibration method is established by analyzing the beam current of shaped beams and the backscattered electron signal from a fine gold particle on the target. Resultant accuracies were 0.013 µm for a beam size of 1.6 µm and 0.025 %micro;m for the relative beam position on the target. Using this method, 0.2 µm ULSI patterns including oblique lines have been accurately formed.

Triangular-variable-shaped beams using the cell projection method

“…5 Furthermore, the origin point of the triangular beam ͑the apex where the beam size of the triangle has become 0͒ is automatically fixed from the aperture configuration and reduction ratio in spite of varying the beam size. The direction of movement of the beam image on the second aperture is only X or Y when varying the triangular beam size.…”

“…5 However, this triangular beam method is only applied to 45°patterns. 5,6 About 50% of reduction in shot count is expected from some typical applications by this technique.…”

Manufacturing of three-dimensional micro-parts by UV laser induced polymerization

“…The absorption coefficient α can be calculated from equation ( 21) by the degree of fluctuation. Next r 0 min and p n are calculated from equations ( 18) and (19).…”

“…Several recent studies on three-dimensional polymer structures and models describe details of maskless fabrication processes [14][15][16][17][18][19][20][21].…”

“…The absorption coefficient α can be calculated from equation (21) by the degree of fluctuation. Next r 0 min and p n are calculated from equations (18) and(19).For example, α = 5 × 10 −2 µm −1 , r 0 min = 20 µm and p n = 9.3 are obtained when L max = 40 µm, w = 40 µm and L max = 2 µm ( p n /p n = ±10%).…”