TRI3DYN Modelling and MEIS Measurements of Arsenic Dopant Profiles in FinFETS

England, Jonathan; Rosa, Lucio dos Santos; Min, Won Ja; Kim, Jwasoon

doi:10.1109/iit.2018.8807967

Cited by 3 publications

(1 citation statement)

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“…The sidewall retention dose ratio in this report was 0.36 (side retention dose/total dose), which is higher than the cos(71.5°) = 0.32, known as the upper limit of the retention dose ratio by trigonometry . In our case, the sidewall retention dose ratio could be increased by overestimating the lower part of sidewall or by accounting for ions that may not have implanted on their first impact with the side wall but will have after subsequent scattering as on structured actual devices …”

Section: Discussioncontrasting

confidence: 49%

Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering

Min¹,

Kim²,

Park³

et al. 2019

Anal. Chem.

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We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The structure of a 3D FinFET and As dopant profiles were determined by comprehensive simulations of TOF-MEIS measurements made in three different scattering geometries. The width and height of a FinFET and the As doping profiles in the top, side, and bottom of fin were analyzed simultaneously. The results showed the dimension and conformal doping profile of nanostructures with complex shape can be determined by TOF-MEIS nondestructively, quantitatively, and with subnm depth resolution without any sputtering and matrix effects.

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Section: Discussioncontrasting

confidence: 49%

Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering

Min¹,

Kim²,

Park³

et al. 2019

Anal. Chem.

Self Cite

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Complementary characterization method of 3D arsenic doping by using medium energy ion scattering

et al. 2021

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We report on a new characterization method of 3D—doping performed by arsenic implantation into FinFET—like nanostructures by using Medium Energy Ion Scattering. Because of its good depth resolution (0.25 nm) at the surface, it is one of techniques of choice suitable to analyse the ultra-shallow doping of thin crystal films. However, with the constraints related to the nanostructures’ geometry and the low lateral resolution of the MEIS beam (0.5 × 1 mm2), we developed an adequate protocol allowing their analysis with this technique. It encompasses three different geometries to account for the MEIS spectra of the arsenic implanted in each part of the nanostructures. The originality of the protocol is that, according to the chosen analysis geometry, the overall spectrum of arsenic is not the same because the contributions of each part of the patterns to its formation are different. By using two of them, we observed double peaks of arsenic. Thanks to 3D deconvolutions performed with PowerMEIS simulations, we were able to identify the contribution of the tops, sidewalls and bottoms in their formation. Thus, by separating the spectrum of the dopants implanted in the Fins (tops + sidewalls) from that of the bottoms, we were able to characterize the 3D doping conformity in the patterns. Two different implantation methods with the associated local doses computed in each single part were investigated. We found that the distribution of the dopants implanted by using the conventional implanter method is very different from that of plasma doping.

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