Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films, 2014, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films,(32) Ion bombardment of the growing film surface is often used to enhance densification; however, the required ion energies typically extract a steep price in the form of residual rare-gas-ion-induced compressive stress. Here, the authors propose a PVD strategy for the growth of dense, hard, and stress-free refractory thin films at low temperatures; that is, with no external heating. The authors use TiN as a model ceramic materials system and employ hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS and DCMS) in Ar/N 2 mixtures to grow dilute Ti 1Àx Ta x N alloys on Si(001) substrates. The Ta target driven by HIPIMS serves as a pulsed source of energetic Ta þ /Ta 2þ metal-ions, characterized by in-situ mass and energy spectroscopy, while the Ti target operates in DCMS mode (Ta-HIPIMS/Ti-DCMS) providing a continuous flux of metal atoms to sustain a high deposition rate. Substrate bias V s is applied in synchronous with the Ta-ion portion of each HIPIMS pulse in order to provide film densification by heavy-ion irradiation (m Ta ¼ 180.95 amu versus m Ti ¼ 47.88 amu) while minimizing Ar þ bombardment and subsequent trapping in interstitial sites. Since Ta is a film constituent, primarily residing on cation sublattice sites, film stress remains low. Dense Ti 0.92 Ta 0.08 N alloy films, 1.8 lm thick, grown with T s 120 C (due to plasma heating) and synchronized bias, V s ¼ 160 V, exhibit nanoindentation hardness H ¼ 25.9 GPa and elastic modulus E ¼ 497 GPa compared to 13.8 and 318 GPa for underdense Ti-HIPIMS/Ti-DCMS TiN reference layers (T s < 120 C) grown with the same V s , and 7.8 and 248 GPa for DCMS TiN films grown with no applied bias (T s < 120 C). Ti 0.92 Ta 0.08 N residual stress is low, r ¼ À0.7 GPa, and essentially equal to that of Ti-HIPIMS/Ti-DCMS TiN films grown with the same substrate bias.