Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

“…5 Chemical pretreatments such as HCl, NH 4 OH, and (NH 4 ) 2 S, aiming to decrease native oxides and passivate the surface 6 followed by ALD processing, have been shown to provide high-k/GaSb structures with better interface quality. 3,4,7 In order to avoid undesirable oxidized interfacial layer formation, high-k oxide deposition directly on oxidefree GaSb surface may be more beneficial. Thermal desorption of sacrificial oxides, 8 hydrogen plasma, 9,10 or atomic hydrogen treatment 11 can be used to remove surface oxides on III-V compounds.…”

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…Данный раствор был применен сначала для пассивации поверхности InAs(111)A [203], что привело к снижению скорости повторного окисления при длительной выдержке на воздухе по сравнению с поверхностями, обработанными водными растворами сульфида натрия или сульфида аммония. В дальнейшем обработка таким раствором использовалась для модификации поверхности GaSb(100), и было показано заметное улучшение вольт-амперных характеристик барьеров Шоттки Au/n-GaSb(100) [204][205][206].…”

Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

“…The Fermi-level is temperature dependent and approaches the valence band edge at low temperatures [35]. The elevated barrier height is therefore possibly related to interface states, the most apparent being the persistent native oxide Ga-O detected previously by XPS [6]. Figure 4 depicts the tunnelling factor E 0 as function of temperature calculated using equations 3 (TE) and 6 (TFE) respectively compared to the experimental values for E 0 using the measured ideality factor.…”

“…It is consequently characterised by a high density of surface states, some of which are acting as non-radiative recombination centres, detrimental to the development of emissions devices of high quantum efficiency. Furthermore the presence of elemental Sb on the surface creates a conduction path parallel to the active surface region, resulting in the non-ideal behaviour of GaSb-based devices [1,5,6]. These factors by and large restrict the potential that GaSb and GaSb-based strained layer super lattices offer as successors to the current generation of long wavelength (LWIR) and very long wavelength infra-red (VLWIR) -optoelectronic materials.…”

“…Regarding GaSb, in a previous XPS study by ourselves [6], the persistent presence of a native oxide layer together with elemental Sb have been confirmed on the GaSb surface, despite thorough cleaning, etching and sulphur passivation. It is therefore reasonable to assume nonuniformity at the MS interface resulting in lateral inhomogeneity of the barrier height.…”