Traps and trapping phenomena and their implications on electrical behavior of high-k capacitor stacks

Abstract

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Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

“…For a further evaluation of the long‐term, stress‐induced new defect (trap) generation, we measured the stress‐induced leakage current (SILC) characteristics by imposing ramped‐voltage stress under the substrate‐electron injection condition (positive V g ). In this measurement set‐up, the V g ‐dependent leakage current was measured by scanning V g in both forward and backward directions to V ramp and zero, respectively, while V ramp was increased in a step function during the consecutive measurements . As shown in Fig.…”

In situ electron holography study of charge distribution in high-κ charge-trapping memory

“…Subsequently, the charging scenario can be portrayed based on the above results. Under a lower bias, the Fowler-Nordheim tunnelling mechanism occurs, although the situation is more complicated in HfO 2 stacks than in pure SiO 2 film 26 . The band diagram is shown in Supplementary Fig.…”

“…The coexistence of the negative and positive charges cannot be discerned by general electric diagnoses, which feature the effective charge behaviour only as well as SPM with charge force detector whose resolution is too poor to distinguish the vertical charge spatial separation. The positive charge layer neglected in the previous pr ogramming studies with or without modelling analysis should be taken seriously because it may have a contradictory role that not only enhances the electron tunnelling through SiO 2 film to accelerate the charging process 26 but also increases the risk of SiO 2 breakdown and the retention charge loss 39 , affecting the programming/erasing performance and the device reliability 40,41 . The uneven distribution of the positive and negative charges may reflect that the charge traps do not distribute uniformly in the nanoscale because of the grains in the HfO 2 layer, although the local morphology of the interface seems flate.…”

Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor

“…3. This phenomenon implies an increased stress-induced leakage current (SILC), possibly due to the formation of traps in the gate dielectric, which is commonly attributed to trap-assisted tunneling [11]. The NH 3 plasma-passivated samples have a lower value of leakage current compared to the unpassivated sample.…”