Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>under high pressure

Segura, A.; Panchal, V.; Sánchez-Royo, Juan F.; Marín-Borrás, V.; Muñoz‐Sanjosé, V.; Rodríguez‐Hernández, P.; Múñoz, A.; Pérez-González, E.; Manjón, F. J.; González, J.

doi:10.1103/physrevb.85.195139

Cited by 31 publications

(29 citation statements)

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“…(c) After ETT, the CBM and VBM of bulk states are both located at Γ point, which is same as that of surface states, causing a reduction in the separation between surface states and bulk states in the momentum space. However, on the contrary, after ETT, the separation is further enhanced for Bi 2 Te 3 , Bi 2 Se 3 and Sb 2 Te 3 202126.…”

Section: Discussionmentioning

confidence: 90%

“…The orbital composition is almost invariant under selective pressures. This indicates that the TI character should be stable under pressure26. On the other hand, it is found that the increasing interlayer spin-orbit coupling and the fluctuation of LEP activity35 under pressure caused a positive pressure coefficient of indirect band-gap and a reduction in the direct band-gap at Γ point, which result in an indirect-to-direct transition36.…”

Section: Resultsmentioning

confidence: 99%

“…The electronic band structures of Ag 2 Te around ETT are different. And the differences are as follows: (a) The CBM and VBM show higher curvature after ETT, and a lower effective mass is expected26. (b) Due to indirect-to-direct band-gap transition, Ag 2 Te becomes a direct band-gap semiconductor after ETT, which is unique for 3D TIs, being a better candidate for infrared detection439.…”

Section: Discussionmentioning

confidence: 99%

“…Besides, in order to meet the technological application of 3D TIs, a good bulk insulating character is necessary. However, so far, only Bi 2 Se 3 exhibits an increase of the bulk resistivity under compression252627. Therefore, it is important to explore the electrical transport property of β -Ag 2 Te by applying pressure, in order to find a better candidate for implementing devices with 3D TIs.…”

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confidence: 99%

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Electronic Topological Transition in Ag2Te at High-pressure

Zhang

et al. 2015

Sci Rep

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Recently, Ag2Te was experimentally confirmed to be a 3D topological insulator (TI) at ambient pressure. However, the high-pressure behaviors and properties of Ag2Te were rarely reported. Here, a pressure-induced electronic topological transition (ETT) is firstly found in Ag2Te at 1.8 GPa. Before ETT, the positive pressure coefficient of bulk band-gap, which is firstly found in TIs family, is found by both first-principle calculations and in situ high-pressure resistivity measurements. The electrical resistivity obtained at room temperature shows a maximum at 1.8 GPa, which is nearly 3.3 times to that at ambient pressure. This result indicates that the best bulk insulating character and topological nature in Ag2Te can be obtained at this pressure. Furthermore, the high-pressure structural behavior of Ag2Te has been investigated by in situ high-pressure synchrotron powder X-ray diffraction technique up to 33.0 GPa. The accurate pressure-induced phase transition sequence is firstly determined as P21/c → Cmca → Pnma. It is worth noting that the reported isostructural P21/c phase is not existed, and the reported structure of Cmca phase is corrected by CALYPSO methodology. The second high-pressure structure, a long puzzle to previous reports, is determined as Pnma phase. A pressure-induced metallization in Ag2Te is confirmed by the results of temperature-dependent resistivity measurements.

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Section: Discussionmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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confidence: 99%

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Electronic Topological Transition in Ag2Te at High-pressure

Zhang

et al. 2015

Sci Rep

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“…Thermopower was determined simultaneously using a dc method, where the sample was fixed to a ceramic surface with a small heater attached next to it, and the thermal gradient was determined using a chromel-constantan differential thermocouple. The bulk band gap was determined through transmission and reflection measurements on cleaved thin 57008-p1 flakes, using a Bruker Hyperion microscope, by following the energy of the onset of the Fabry-Perot interferences, similar to the previous high-pressure studies of bismuth chalcogenides [7,10,11]. The behavior of the resistivity throughout the series is shown in fig.…”

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confidence: 99%

Bi ₂ Te _3−x Se _x series studied by resistivity and thermopower

Akrap¹,

Ubaldini²,

Giannini³

et al. 2014

EPL

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-We study the detailed temperature and composition dependence of the resistivity, ρ(T ), and thermopower, S(T ), for a series of layered bismuth chalcogenides Bi2Te3−xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity of the most compensated member, Bi2Te2.1Se0.9, we find a low-temperature plateau whose onset temperature correlates with the high-temperature activation energy. For the whole series S(T ) can be described by a simple model for an extrinsic semiconductor. By substituting Se for Te, the Fermi level is tuned from the valence band into the conduction band. The maximum values of S(T ), bulk band gap as well the activation energy in the resistivity are found for x ≈ 0.9.

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High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

Manjón

Vilaplana

Gomis

et al. 2013

Physica Status Solidi (b)

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are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500 K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies have been done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, we review recent results that address the main characteristics of the pressure-induced electronic topological transition and structural phase transitions observed in this family of compounds. Future high-pressure studies to be performed on these 3D topological insulators are also commented.

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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3under high pressure

Cited by 31 publications

References 50 publications

Electronic Topological Transition in Ag2Te at High-pressure

Electronic Topological Transition in Ag2Te at High-pressure

Bi ₂ Te _3−x Se _x series studied by resistivity and thermopower

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3under high pressure

Cited by 31 publications

References 50 publications

Electronic Topological Transition in Ag2Te at High-pressure

Electronic Topological Transition in Ag2Te at High-pressure

Bi 2 Te 3−x Se x series studied by resistivity and thermopower

High‐pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

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Product

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Bi ₂ Te _3−x Se _x series studied by resistivity and thermopower

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃