Trapping of irradiation-induced defects by tin atoms in an Al-0.03 at.% Sn crystal

Swanson, M. L.; Howe, L.M.; Quenneville, A. F.

doi:10.1103/physrevb.22.2213

Cited by 25 publications

(6 citation statements)

References 33 publications

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“…A similar enhancement of vacancy clustering by solutes has been observed in positron annihilation studies in dilute alloys of Al with Cu (14) and with Si (15). Solute-multivacancy clustering is also observed by Rutherford backscattering measurements in the early stages of vacancy recovery from low temperature irradiation (16).…”

Section: Resultsmentioning

confidence: 69%

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10⁻² at.% Mn

Hood¹,

Schultz²

1982

Can. J. Phys.

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Single crystals of Al and Al -1.5 X lo-' at.% Mn have been quenched from 753 K. The quenched state and its recovery have been studied by positron annihilation. The Doppler-broadening technique was used and the results analyzed in terms of characteristic peak ( S ) and wing (W) parameters, chosen to emphasize annihilation with valence and core electrons, respectively. The prime effects of the Mn are to enhance both the quenched-in defect signal for S and the rise in S observed during the initial stages of vacancy recovery (180-250 K). In surprising contrast, the W data are remarkably similar for the two materials and show little sign of vacancy recovery below 240 K . At higher temperatures, the recovery data for S and W do appear to complement one another. The main recovery stage is centred at 300 K and a second, broad stage extends from -370-480 K. The main vacancy recovery stages found here show a good correspondence with earlier resistivity and quenching data. Measurements of the temperature dependence of S and W in Al for both the well-annealed and quenched states are in reasonable accord with results from a previous investigation.

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Section: Resultsmentioning

confidence: 69%

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10⁻² at.% Mn

Hood¹,

Schultz²

1982

Can. J. Phys.

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“…2). Unfortunately, in the present case, the combination of [7] and [4] gives Ci coefficients that are almost identical to those of [3]. Similarly, the use of [6] does not provide an independent equation for the calculation of Ci.…”

Section: Evidence For Specific Vvacancy -Solute Complexesmentioning

confidence: 66%

“…7 and 10-12 for A1 -0.04 at.% Sn cgstals, the results of the analysis using [3]- [5] and [7] are shown in Figs. 16 and 17.…”

Section: Discussionmentioning

confidence: 99%

“…However, recent measurements (28) have shown that the tetravacancy -solute atom configuration is formed by vacancy capture in Cu -0.1 at.% In, Ni -0.1 at.% In, and Ni -0.1 at.% Au alloys. In A1-0.03 at.% Sn crystals, trapping of vacancies by Sn atoms during annealing near 200 K caused the Sn atoms to be displaced into tetrahedral and octahedral lattice sites (3,29). These sites were associated with the tetravacancy -solute atom complex, as discussed above, and with a new complex containing six vacancies.…”

Section: Introductionmentioning

confidence: 98%

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A channeling study of vacancy – solute atom complexes in irradiated aluminum crystals

Swanson¹,

Howe²,

Moore³

et al. 1984

Can. J. Phys.

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The irradiation-induced evolution of vacancy -solute atom complexes in AI-Sn and Al-In crystals was studied by ion channeling. The backscattering yields from host and solute atoms-near the (loo), (1 10). (21 I), and (1 11) channels h e r e measured in these alloys to determine the positions of the solute atoms in the lattice. During annealing near 200 K following 4He' irradiation at 35 K, thc solute atoms trapped vacancies, thus becoming displaced from substitutional lattice sites into the characteristic interstitial positions (113. 116, 1/6)ao, (114, 114, 1/4)ao. and (112. 112, 1/2)a,, surroundcd by thrcc. four, and six vacancies, respectively. Subsequent irradiation at 70 K reduced the size of thcse vacancy clusters. Thc evolution and the decay of these vacancy -solute atom complexes were measured quantitatively during irradiation and annealing. On a ktudik, en utilisant la canalisation d'ions, I'Cvolution, induite par irradiation, des complexes lacunes-atomes dissous dans des cristaux AI-Sn et Al-In. On a mesurk la rktrodiffusion par les atomes du milieu hBte et par les atomes dissous, au voisinage des canaux (loo), (I lo), (21 1) et (I I I) dans ces alliages, afin de determiner les positions dans le rescau des atomes dissous. Durant le recuit au voisinage de 200 K. aprts irradiation par 4He' i 35 K , les atomes dissous capturcnt des lacunes, ce qui les dkplace de leurs positions de substitution dans le rkseau vers les positions interstiticlles caractkristiques (113, 116, 1/6)orl, (114, 114, 1/4)a0 et (112, 112. 112)ao, ou ils sont cntoures par trois, quatre et six lacunes, rcspectivement.Une irradiation subsequente i 70 K reduit la grosseur de ces amas lacunaires. L'Cvolution et la desintegration dc ces complexes lacunes-atome dissous ont fait I'objet dc mcsures quantitatives durant I'irradiation ct le recuit.[Traduit par le journal]Can. J. Phys. 62. 826 (1984)

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“…In conclusion, based on the structure of the Mossbauer spectra, on the line positions and widths, on the high vacancy concentration found by positron lifetime measurements and on the tin relaxation observed in ion-channelling experiments [6][7][8]381, we propose that the Mossbauer line at 2.275 mm s-l, besides substitutional tin with perfect surroundings, corresponds to tin-vacancy pairs and to those relaxed interstitial-tin-vacancy complexes or generally tin-defect complexes where the relaxation does not result in a substantial increase of the effective volume available for the tin atom. Hence tin atoms along dislocations, collapsed vacancy loops and larger dislocation loops may well give a contribution to this line.…”

Section: The Nature Of the Mossbauer Lines The Comparison Of The Moss...mentioning

confidence: 99%

Vacancy trapping at tin atoms during the recovery of a fast-quenched dilute aluminium-tin alloy and its effect on the isomer shift of the¹¹⁹Sn Mossbauer isotope

Szeles

Süvegh

Homonnay

et al. 1990

J. Phys.: Condens. Matter

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Vacancy trapping at tin atoms during stage III and stage IV recovery as well as tin precipitation were studied in a fast-quenched Al-0.014 at.% Sn alloy by parallel positron lifetime and Mossbauer spectroscopy. The results show that the substitutional 119Sn isotope with a trapped vacancy has 2.275 mm s-1 isomer shift. Trapping of more vacancies may cause significant line shift and leads to the appearance of a line at 2.86 mm s-1 in the Mossbauer spectra. The origin of this line position was interpreted as the relaxation of substitutional tin atoms to tetrahedral and octahedral interstitial positions in the centre of the vacancy clusters nucleated at the tin atoms. The defect recovery taking place in the alloy was found to be dominated by the strong tin-vacancy interaction. In stage III annealing, both vacancy annihilation and the formation of vacancy clusters independent of tin atoms are considerably suppressed by the strong trapping of vacancies at tin atoms. In stage IV recovery, the dissolution of dislocation loops, the migration of tin-multivacancy complexes and the formation of tin-atom clusters were observed. Precipitation of metallic tin exhibits several substages. The positron trapping observed upon precipitation was ascribed to the mismatch free volumes at the incoherent particle-matrix interface of the precipitates.

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Trapping of irradiation-induced defects by tin atoms in an Al-0.03 at.% Sn crystal

Cited by 25 publications

References 33 publications

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10⁻² at.% Mn

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10⁻² at.% Mn

A channeling study of vacancy – solute atom complexes in irradiated aluminum crystals

Vacancy trapping at tin atoms during the recovery of a fast-quenched dilute aluminium-tin alloy and its effect on the isomer shift of the¹¹⁹Sn Mossbauer isotope

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Trapping of irradiation-induced defects by tin atoms in an Al-0.03 at.% Sn crystal

Cited by 25 publications

References 33 publications

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10−2 at.% Mn

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10−2 at.% Mn

A channeling study of vacancy – solute atom complexes in irradiated aluminum crystals

Vacancy trapping at tin atoms during the recovery of a fast-quenched dilute aluminium-tin alloy and its effect on the isomer shift of the119Sn Mossbauer isotope

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Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10⁻² at.% Mn

Positron annihilation studies of quenching and recovery of single crystals of Al and Al – 1.5 × 10⁻² at.% Mn

Vacancy trapping at tin atoms during the recovery of a fast-quenched dilute aluminium-tin alloy and its effect on the isomer shift of the¹¹⁹Sn Mossbauer isotope