Abstract:The trapping and thermal reemission of 100–300-eV Ar+ and Kr+ ions at a polycrystalline nickel target have been studied. For Ar+ and Kr+ the trapping probabilities are, respectively, 0.020 and 0.015 at 100 eV and 0.46 and 0.33 at 300 eV. A continuous temperature increase of the target releases trapped argon discontinuously by thermally activated processes at temperatures corresponding to activation energies of 1.12, 1.31, 1.48, 1.67, 1.83, and 2.13 eV. These energies are compared with activation energies which… Show more
“…Argon ions are implanted into the substrate by the type of bombardment we are performing here [SI, but the low intensity of characteristic photoelectric lines of argon in our spectra suggests that this is not a severe problem. For proper surface preparation, the argon-ion sputtering should of course be followed by annealing to remove implanted argon ions and defects [13].…”
“…Argon ions are implanted into the substrate by the type of bombardment we are performing here [SI, but the low intensity of characteristic photoelectric lines of argon in our spectra suggests that this is not a severe problem. For proper surface preparation, the argon-ion sputtering should of course be followed by annealing to remove implanted argon ions and defects [13].…”
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