1960
DOI: 10.1111/j.1151-2916.1960.tb13682.x
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Trapped Electrons in Irradiated Quartz and Silica: II, Electron Spin Resonance

Abstract: The correlation of two paramagnetic defects, observed by the electron spin resonance (ESR) technique, with two optical absorption bands produced by r‐ray or neutron irradiation is indicated. The peaks of the two absorption bards fall at ∼2100 8.u. and 2300 a.u. The effective g values for the ESR lines, for a crystal orientation with respect to the magnetic field of 100.1] parallel to H2, are 2.0006 plusmn; 0.0005 for the 2100 a.u. band, and there are two lines observed for the 2300 a.u. band at [g= 2.0007 and … Show more

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Cited by 203 publications
(40 citation statements)
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“…For the implementation of SSTFM, Payne et al [9] suggested to use a crystalline silicon (c-Si) scanning probe tip with an amorphous silicondioxide (SiO 2 ) film in which a single E' center [14][15][16][17] would be used as probe spin, located at the apex. E' centers exhibit positive correlation energies and are therefore paramagnetic, a property that allows them to be studied with electron paramagnetic resonance (EPR) spectroscopy [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…For the implementation of SSTFM, Payne et al [9] suggested to use a crystalline silicon (c-Si) scanning probe tip with an amorphous silicondioxide (SiO 2 ) film in which a single E' center [14][15][16][17] would be used as probe spin, located at the apex. E' centers exhibit positive correlation energies and are therefore paramagnetic, a property that allows them to be studied with electron paramagnetic resonance (EPR) spectroscopy [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…The strong hyperfine splitting is explained by the one due to 29 Si (Silsbee, 1961). Since the early stage of the studies on this center, it is well known that its signal intensity increases on heating (e. g. Weeks and Nelson, 1960). The electronic process for this phenomenon was proposed by Jani et al (1983), who suggested that that the electronic holes at Al hole centers activated by heating are transferred to diamagnetic oxygen vacancies with two electrons (Si-Si bond).…”
Section: Introductionmentioning
confidence: 99%
“…It is well known that its signal intensity increases during heating (e. g. Weeks and Nelson, 1960). Jani et al (1983) attributed this phenomenon to an electronic process in which activated by heating holes at Al hole centres are transferred to diamagnetic oxygen vacancies with two electrons (Si-Si bond).…”
Section: The E 1 ' Centre and The Oxygen Va-cancy In Quartzmentioning
confidence: 99%