2019
DOI: 10.1039/c8tc06093b
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Trap engineering in solution processed PbSe quantum dots for high-speed MID-infrared photodetectors

Abstract: The ongoing quest to find methods to control the trap states in solution processed nanostructures (trap engineering) will revolutionise the applications of nanomaterials for optoelectronic purposes.

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Cited by 37 publications
(29 citation statements)
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“…This avoids the introduction of Br − and SCN − ion impurities into the sample (which occur with the tetrabutylammonium bromide and ammonium thiocyanate treatments, respectively) that could potentially be problematic in some scenarios and applications. We anticipate that the PbSe nanocrystal films with SnSe‐like interstitial material in this work could be promising for thin film transistors, and optoelectronics . PbSe is also an excellent thermoelectric material and Sn‐alloyed PbSe can function as topological crystalline insulator …”
Section: Resultsmentioning
confidence: 93%
See 1 more Smart Citation
“…This avoids the introduction of Br − and SCN − ion impurities into the sample (which occur with the tetrabutylammonium bromide and ammonium thiocyanate treatments, respectively) that could potentially be problematic in some scenarios and applications. We anticipate that the PbSe nanocrystal films with SnSe‐like interstitial material in this work could be promising for thin film transistors, and optoelectronics . PbSe is also an excellent thermoelectric material and Sn‐alloyed PbSe can function as topological crystalline insulator …”
Section: Resultsmentioning
confidence: 93%
“…We anticipate that the PbSe nanocrystal films with SnSe-like interstitial material in this work could be promising for thin film transistors, [42,43] and optoelectronics. [44][45][46][47] PbSe is also an excellent thermoelectric material [48,49] and Sn-alloyed PbSe can function as topological crystalline insulator. [50][51][52]…”
Section: Treatment Of Pbse Nanocrystal Thin Films With Tin(iv) Methylmentioning
confidence: 99%
“…Lead selenide (PbSe) CQDs have a tunable bandgap in the MWIR, but are less developed than HgTe CQDs for photodetection. 19 Heavy metal-free CQD alternatives include indium arsenide (InAs), indium antimo-nide (InSb), and their ternary alloy with IR absorptions tunable from SWIR to MWIR wavelengths. 20 Unfortunately, these heavy metal-free alternatives are much less developed.…”
Section: Making Strides Toward Commercial Cqd Ir Imagingmentioning
confidence: 99%
“…This interest arises mostly from the strong quantum confinement, and the broad size-tunability of the bandgap energies [9,10]. Therefore, photoluminescence emissions of lead chalcogenides NCs can cover the near-infrared region entirely, and specifically lead selenide (PbSe) NCs cover PL emissions over the mid-infrared wavelengths [11,12]. Efficient mid-infrared devices play an essential role in a variety of applications, including remote detection, environmental sensing, and gas analysis [13][14][15].…”
Section: Introductionmentioning
confidence: 99%