Abstract:Material or interface defectivity assessment of 2D materials remains a challenge, specifically in terms of simple techniques which can be integrated in a CMOS process line. Here we demonstrate an optical technique that assesses interface trap densities, based on the indirect photoluminescence emission. We achieved that by demonstrating the modulation of the indirect/direct photoluminescence peak intensity ratio by the exciton concentration and then linking the modulation to the trap-sensitive non-radiative Aug… Show more
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