Transverse optical mode analysis of long-wavelength VCSELs for high single-mode power operation

Long Wavelength VCSELs and VCSEL-Based Processing of Microwave Signals

“…Such layers on both sides of the active cavity help for precise adjustment of the emission wavelength. Numerical simulations of such a structure [16] indicates (Figure 1b), that in normal operation conditions in the device, operating predominately in the fundamental mode, the gain and mode profiles spread outside the active region defined by the tunnel junction mesa by about 1-1.5 μm. The details of fabrication process are presented in Figure 3, starting from mesas etched in the tunnel junction (a), then after re-growth (b).…”

Wafer-fused heterostructures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

“…The optical confinement is due to a lateral refractive index variation that corresponds to a difference in the optical paths of about 7 nm for the light propagating through the tunnel junction mesa and adjacent re-grown InP. Figure 1(b) presents transverse gain and mode profiles of this design at different temperatures that were obtained by numerical solving of a fully coupled two-dimensional set of elctro-opto-thermal equations [15]. As one can observe from figure 1(b), the fundamental mode is predominant and the gain and mode profiles spread by about 1-1.5 μm outside the active region defined by the tunnel junction mesa.…”