Transverse Magnetoresistance in Plastically Deformed n‐Type Germanium

Abstract

The transverse magnetoresistance in plastically bent n-type Ge has been measured a t 77 "K. I n the bent samples the magnetoresistance coefficients were strongly increased and a t the same time the mobility was reduced. This effect is caused by the scattering of electrons on dislocations. A theoretical model is presented for evaluating the magnetoresistance coefficients, taking into account anisotropic scattering caused by the dislocations, and the conduction band structure of Ge. The theoretical results agree well with the experimental ones. BbIJIO H3MepeHO IIOIIepesHOe MarHeTOCOrIpOTHBJIeHue B IIJIaCTH4eCHH H30rHYTOM KOe@$HUHeHTbI MaTHeTOCOIIpOTHBJIeHHX CHJIbHO BOBPOCJIH, B TO me BpeMfi nOHBH?K-HOCTb HOCHTeJIefi yMeHbmaJIaCb. 3 T O T 3@@eHT 06yCJIOBJIHBaeTCH PaCCeHHHeM JIeHHFI H03@@I44HeHTOB MarHeTOCOrIPOTHBJIeHHH C Y4eTOM BJIHHHHH aHH30TpOIIHH paCCeHHHFI HOCHTeJIet pfCJIOIGi~HHMH, H TaKXe CTpYHTYpbI 3 0 H IIpOBOjViMOCTH repMaHI4FI. repMaHm n-mna n p~ TeMnepaType 77 "Ec. B M~O I -H~T~I X o6paauax 6e3pa3~ep~bre ~J I~K T~O I I O Bamcnoi<aqn~Mu. M a n a r a e~c~ TeopeTmecKaH Monem AJIFI BbIuc-TeopeTHqecHme pe3yJIbTaTbI COBIIanaIoT C 3KCIIepHMeHTOM.Pig. 1. Magnetoresistance vs. square of the magnetic field for field directions parallel to the dii-