Transverse laser-induced thermoelectric voltages in tilted La2−xSrxCuO4 thin films

Abstract

The transverse laser-induced thermoelectric voltages in the tilted La2−xSrxCuO4 (LSCO) thin films are observed for the first time. The detected signals are demonstrated to originate from the anisotropy of thermoelectric power and depend on the Sr-doping level drastically. The largest voltage is observed in the LSCO films at x=0.15 under the irradiation of different lasers with the wavelength in the spectrum range from infrared to ultraviolet. The dependence of the signals on Sr-doping content is associated with a two dimensional charge transport behavior in LSCO films near the optimum doping content.

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

“…A large signal of 0.8 V is generated on the surface of the thin films with x = 0.1, and the signal maximum is shown to be occurred on the thin films with Ce content near to the optimum doping content for the superconductivity of NCCO [20]. It has been reported that the strongest LITV signal in La 2-x Sr x CuO 4 (LSCO) thin films is also measured at the optimum Sr doping content of 0.15 for the superconductivity, when the films are irradiated by the same pulsed laser of 248 nm [15]. These observed results suggest that there would be some relationship between the LIV and superconductivity.…”

“…These tilted thin films are referred to ALT materials, and the LITV response can be optimized by tailoring the film thickness and the inclined crystal orientation [6,7,11]. LITV signals have been detected in several cuprates [4][5][6][7][8][9][10][11][12][13][14][15] which are correlated with the perovskites of Ruddlesden-Popper family [16], since the layered structures can cause different transport properties in various atomic layers and then large anisotropic thermopower DS, a key factor to LITV effect [2,5]. LITV signals are observed scaling to the resistance of thin films [17], and the doping dependence always shows the same behaviors as the change in DS upon the charge carrier density [14,15].…”

Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO2 films

“…The NTE element was 12 Â 10 mm 2 in size. The contact area of the film with each copper block was roughly 42 mm 2 . The copper strips were 19:8 Â 33:1 Â 1:0 mm 3 in size.…”

“…1 In order to capture IR radiation and convert it into usable electricity, the ability of thermoelectric (TE) devices to produce a voltage when irradiated was demonstrated in various reports. [1][2][3] Commercially available bulk TE devices produce a voltage DVðtÞ when a temperature difference DTðtÞ is established between its "hot" and "cold" junctions. This phenomenon is TE power generation, which obeys the Seebeck effect, [4][5][6][7][8][9][10] where DVðtÞ ¼ ÀS Ã DTðtÞ and S is the Seebeck coefficient.…”

Transverse Thermoelectricity in Fibrous Composite Materials

“…In contrast, TE devices may also be constructed from elements with transverse thermoelectricity, i.e., electric current can induce a heat flow in the perpendicular direction or vice versa [3,4]. Therefore, transverse TE can potentially decouple the electric current and heat flux, and thus enable new device designs such as thin-film coolers [5,6] and cascading transverse TE devices [7,8].…”