Transverse effective charge and its pressure dependence in GaN single crystals

Perlin, P.; Suski, T.; Ager, Joel W.; Conti, G.; Polian, A.; Christensen, N. E.; Gorczyca, I.; Grzegory, I.; Weber, E. R.; Häller, E. E.

doi:10.1103/physrevb.60.1480

Cited by 29 publications

(25 citation statements)

References 19 publications

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“…The Raman spectrum for sample no. 7 shows a broad peak between the E 2 (high) and A 1 (LO) phonons, which may be related to lattice disorder as a similar observation has been made on a high-temperature-annealed GaN film [20].…”

Section: Article In Pressmentioning

confidence: 65%

See 1 more Smart Citation

Effect of growth temperature on Eu incorporation in GaN powders

Shi¹,

Chandrashekhar²,

Reiherzer³

et al. 2008

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 65%

“…Using Raman factor of 3.2 (GPa cm) À1 for A 1 (LO) mode according to Perlin et al [20], the A 1 (LO) Raman shifts caused by strain may be deducted from the total A 1 (LO) frequency shift. The Raman shifts due to phonon-plasmon coupling are listed in Table 2.…”

Section: Article In Pressmentioning

confidence: 99%

Effect of growth temperature on Eu incorporation in GaN powders

Shi¹,

Chandrashekhar²,

Reiherzer³

et al. 2008

Journal of Crystal Growth

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“…In order to investigate the effect of built-in strains on the high-pressure Raman spectra of w-InN epilayers, we have investigated five different InN samples (see Table I). These measurements were partly motivated by the fact that, in spite of the small number of works dealing with the highpressure vibrational properties of w-InN 4-7 and of w-GaN, [31][32][33][34] the dispersion of reported pressure-coefficient values in these two compounds is relatively high. For instance, in the case of the E 2h mode of w-InN, pressure coefficients ranging from 4.74 cm Figure 7 shows the linear pressure coefficients measured for the zone-center E 2h modes in all the samples investigated in this work.…”

Section: 2829mentioning

confidence: 99%

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

et al. 2013

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We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L − coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k · p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.

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“…Perlin et al found that the separation decreased with increasing pressure [78] but had combined data taken on different samples. Our results, shown in Fig.…”

Section: C)mentioning

confidence: 99%

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

Haboeck

Siegle

Hoffmann

et al. 2003

phys. stat. sol. (c)

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We present a selection of our contributions to basic research on the lattice dynamical properties of group-III nitrides and their alloys. We used first-order Raman scattering to determine the zone-center phonons and their dependence on structural attributes such as stress, chemical composition, impurities, and doping. Results on the angular dispersion of the polar modes, strain distribution, coupled LO-phonon plasmon modes, multi-mode behavior in Al x Ga 1-x N, and the quantitative determination of the phase purity of cubic and hexagonal GaN are shown. Second-order Raman-scattering experiments on GaN and AlN provide information on the vibrational states throughout the entire Brillouin zone. Based on a comparison of experimental data and calculated phonon-dispersion curves we assigned the observed structures to particular phonon branches and points in the Brillouin zone. We also discuss the behavior of the optical modes under large hydrostatic pressure. 1 Introduction During the last decade group-III nitrides have been an object of increasing research because of their interesting physical properties such as an adjustable band gap (1.9 eV to 6.2 eV) by varying the composition of the alloys [1] and application as basic materials for optoelectronic devices working in the blue and ultraviolet spectral region [2][3][4]. In particular GaN and AlN can withstand high temperatures and have large piezoelectric constants which makes them suitable for applications in highfrequency devices, sensors and low-dimensional structures [5,6].Although basic information about group-III nitrides e.g. crystal-and band structure have been available for a decade several details still remained unclear. In the following review of our work we present results of first-and second-order Raman investigations on various GaN, AlN, and Al x Ga 1-x N samples and point out some remarkable details of the structural and optical properties of these materials.

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Transverse effective charge and its pressure dependence in GaN single crystals

Cited by 29 publications

References 19 publications

Effect of growth temperature on Eu incorporation in GaN powders

Effect of growth temperature on Eu incorporation in GaN powders

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy

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