2003
DOI: 10.1098/rsta.2003.1305
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Transport theories of sputtering

Abstract: The use of linear transport theory to calculate several observable quantities in the sputtering process is reviewed. The basic equations previously solved in the literature to obtain the sputtering yield and the energy spectra of sputtered atoms are re-derived and briefly analysed. Comparison with experiments and comments on limitations of theoretical models are included.

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Cited by 7 publications
(2 citation statements)
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“…Therefore, it is believed that the negatively charged ions, generated within the sputtering plasma, are the main species responsible for the microporosity formation. A calculation of the maximum energy distribution of sputtered atoms and ions near the substrate surface under the current operating conditions (discussed later) shows that the sputtering plasma consist of sufficient amount of energetic ions capable of the morphological change of the a:C film [35]. This argument is further justified by the fact that there are several DC plasma etching systems commercially available and routinely used in the fabrication industry, which are designed to operate at a voltage less than 1.0 kV (typically 500-800 V) to dryetch thin films of sub-micron to nm range [36].…”
Section: Mechanismmentioning
confidence: 99%
“…Therefore, it is believed that the negatively charged ions, generated within the sputtering plasma, are the main species responsible for the microporosity formation. A calculation of the maximum energy distribution of sputtered atoms and ions near the substrate surface under the current operating conditions (discussed later) shows that the sputtering plasma consist of sufficient amount of energetic ions capable of the morphological change of the a:C film [35]. This argument is further justified by the fact that there are several DC plasma etching systems commercially available and routinely used in the fabrication industry, which are designed to operate at a voltage less than 1.0 kV (typically 500-800 V) to dryetch thin films of sub-micron to nm range [36].…”
Section: Mechanismmentioning
confidence: 99%
“…Sputtering is the process in which target material is ejected by ion bombardment 45,46 . Sputtering can be used to clean a surface or construct microstructures.…”
Section: Introduction To Sputter Deposition Theorymentioning
confidence: 99%