2020
DOI: 10.1088/2053-1583/abc13f
|View full text |Cite
|
Sign up to set email alerts
|

Transport signatures of temperature-induced chemical potential shift and Lifshitz transition in layered type-II Weyl semimetal TaIrTe4

Abstract: Temperature-induced Lifshitz transitions have been identified in several materials. Their chemical potential shows a substantial shift with changing temperature. The common feature of these materials is the coexistence of electron and hole pockets in the vicinity of the chemical potential. Here, we report the observation of temperature-induced chemical potential shift and Lifshitz transition in a layered type-II Weyl semimetal, TaIrTe4. The reversal of the polarity of the Hall resistivity and thermoelectric po… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

1
2
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 10 publications
(3 citation statements)
references
References 48 publications
1
2
0
Order By: Relevance
“…5), respectively, using the electrical conductivity (σ c ) values given in Supplementary Table 2 (obtained using the electrical conductivity of Py layer, σ Py = 21:3 × 10 5 Ω À1 m À1 ). The obtained electrical conductivity values for TaIrTe 4 are in close agreement with the earlier reports 23,26 .…”
supporting
confidence: 92%
See 1 more Smart Citation
“…5), respectively, using the electrical conductivity (σ c ) values given in Supplementary Table 2 (obtained using the electrical conductivity of Py layer, σ Py = 21:3 × 10 5 Ω À1 m À1 ). The obtained electrical conductivity values for TaIrTe 4 are in close agreement with the earlier reports 23,26 .…”
supporting
confidence: 92%
“…The topological Weyl semimetal candidate TaIrTe 4 has gained significant attention as it shows the presence of bulk Weyl nodes and Fermi-arc surface states, which are unique band crossings in momentum space and useful spin textures that can give a variety of unusual electronic and charge-to-spin conversion properties [22][23][24][25][26] . The combination of topological spin textures and lower crystal symmetry hence makes TaIrTe 4 a promising candidate for energy-efficient SOT devices.…”
mentioning
confidence: 99%
“…Temperature-induced Lifshitz transitions are also observed in other TSMs, for example, MTe 5 (M = Zr, Hf) 26 , 27 , InTe 1-δ 28 , ZrSiSe 29 , WTe 2 30 , and TaIrTe 4 31 . Anomalies in both longitudinal resistivity and Hall resistivity/coefficient can be found in MTe 5 (M = Zr, Hf) 26 , 27 , InTe 1-δ 28 , and ZrSiSe 29 , but not in WTe 2 30 and TaIrTe 4 31 . Since we have observed the change of Hall resistivity in EuAs 3 (Fig.…”
Section: Discussionmentioning
confidence: 86%