Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers

Abstract

The global dynamical properties of a quantum system can be conveniently visualized in phase space by means of a quantum phase space entropy in analogy to a Poincaré section in classical dynamics for two-dimensional time-independent systems. Numerical results for the Pullen-Edmonds systems demonstrate the properties of the method for systems with mixed chaotic and regular dynamics. § Present address: Theoretische Physik I,

Fabrication of a dual-gate-controlled Coulomb blockade transistor based on a silicon-on-insulator structure

“…The CB oscillations were demonstrated for low temperatures and Coulomb staircases were observed of up to four current steps. Similar device structures were found in the recent works of the Hitachi and Cambridge groups [7,8], but they are fabricated on bulk-silicon and are basically different from ours in positioning the split gates. In their dualgate SET structures, the split gate is the upper-level gate, and located at a considerable distance from the 2DEG carriers.…”

Interference of charge carrier in a double-dot nanopillar transistor

“…Still, later experiments on silicon-inversion-layer 4 and GaAs/ AlGaAs heterostructures 5 revealed that when the gate-dot coupling strength ͑␣͒ becomes progressively stronger quasibeat will show up due to the effect of peak splitting. By coupling the dots at a distance less than the Fermi wavelength F , the authors observe full size beats in current-voltage ͑I-V͒ characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1.…”