Transport properties of thin flakes of the antiferromagnetic topological insulator 
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Cui, Jianhua; Shi, Mengzhu; Wang, Honghui; Yu, Fangwei; Wu, Tao; Luo, X. G.; Ying, Jianjun; Chen, Xianhui

doi:10.1103/physrevb.99.155125

Cited by 110 publications

(103 citation statements)

References 20 publications

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“…Such surface magnetism variation has already been found in CrI 3 , whose bulk magnetism resembles to that of MnBi 2 Te 4 (31). The widely Previous studies demonstrate that the antiferromagnetic transition temperature of MnBi 2 Te 4 is ~ 25 K (23,24,(32)(33)(34)(35), and the magnetic order is aligned under magnetic field at 7.7 T(23, 24).…”

Section: Figurementioning

confidence: 52%

Electronic States and Magnetic Response of MnBi₂Te₄ by Scanning Tunneling Microscopy and Spectroscopy

Yuan

Wang

et al. 2020

Nano Lett.

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Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi 2 Te 4 . At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers of MnBi 2 Te 4 , respectively. The measured band structures exhibit intriguing and complex properties. Here we employ low-temperature scanning tunneling microscopy to study its surface states and magnetic response. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi 2 Te 4 is different from that of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure presumably related to the modification of crystalline structure during sample cleaving and re-orientation of magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The ratio of Mn/Bi substitutions is 5%. The electronic structures are fluctuating at atomic scale on the surface, which can affect the magnetism of MnBi 2 Te 4 . Our findings shed new lights on the magnetic property of MnBi 2 Te 4 and thus the design of magnetic topological insulators.

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Section: Figurementioning

confidence: 52%

Electronic States and Magnetic Response of MnBi₂Te₄ by Scanning Tunneling Microscopy and Spectroscopy

Yuan

Wang

et al. 2020

Nano Lett.

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“…were grown via a solid-state reaction method as described in an earlier study [5,40]. X-ray diffraction measurements were carried out on each sample to identify the correct phase.…”

Section: Sample Preparation and Characterization Single Crystals Of mentioning

confidence: 99%

“…These results show that the TSSs in (MnBi2Te4)m(Bi2Te3)n heterostructures are sensitive not only to the surface layer, but also to the underlying layers. 5 Now we discuss the possible origin of the above key observations in (MnBi2Te4)m(Bi2Te3)n heterostructures. The first thing is to understand the universal gapless TSSs.…”

mentioning

confidence: 97%

“…In the newly discovered magnetic topological insulator MnBi2Te4 [1][2][3][4][5][6][7][8], both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure [9][10][11]. The related (MnBi2Te4)m(Bi2Te3)n heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states [12][13][14][15][16].…”

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confidence: 99%

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Universal gapless Dirac cone and tunable topological states in (MnBi2Te4)m(

Shi

et al. 2020

Phys. Rev. B

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“…Theory has predicted several intrinsic antiferromagnetic (AF) TIs, such as MnBi2Te4 [16,[19][20][21]33,40] and EuIn2As2 [17], while most experimental studies focused on MnBi2Te4 [18,21,[25][26][27][30][31][32][33][34][35][36][37][38][39]. Very recently, a quantized Hall plateau at h/e 2 was realized in few-layer MnBi2Te4 sheets under moderate magnetic fields of several Tesla [30,32].…”

mentioning

confidence: 99%

Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and
Li¹,
Gao²,
Duan³
et al. 2019
Phys. Rev. X
238
10
114
2
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In magnetic topological insulators (TIs), the interplay between magnetic order and nontrivial topology can induce fascinating topological quantum phenomena, such as the quantum anomalous Hall effect, chiral Majorana fermions and axion electrodynamics. Recently, a great deal of attention has been focused on the intrinsic magnetic TIs, where disorder effects can be eliminated to a large extent, which is expected to facilitate the emergence of topological quantum phenomena. In despite of intensive efforts, the experimental evidence of topological surface states (SSs) remains elusive. Here, by combining first-principles calculations and angle-resolved photoemission spectroscopy (ARPES) experiments, we have revealed that EnSn2As2 is an antiferromagnetic TI with observation of Dirac SSs consistent with our prediction.We also observed gapless Dirac SSs in another antiferromagnetic TI MnBi2Te4, which were missed in previous ARPES study. These results provide clear evidence for nontrivial topology of the two intrinsic magnetic TIs. Moreover, the topological SSs show no observable changes across the magnetic transitions within the experimental resolution, indicating that the magnetic order has limited effect on the topological SSs, which can be attributed to weak hybridization between the magnetic states and the topological electronic states. This provides insights for further studies that the correlations between magnetism and topological states need to be strengthened to induce larger gaps of the topological SSs, which will facilitate the realization of topological quantum phenomena at higher temperatures.

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Transport properties of thin flakes of the antiferromagnetic topological insulator MnBi2Te4

Cited by 110 publications

References 20 publications

Electronic States and Magnetic Response of MnBi₂Te₄ by Scanning Tunneling Microscopy and Spectroscopy

Electronic States and Magnetic Response of MnBi₂Te₄ by Scanning Tunneling Microscopy and Spectroscopy

Universal gapless Dirac cone and tunable topological states in (MnBi2Te4)m(

Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and
Li¹,
Gao²,
Duan³
et al. 2019
Phys. Rev. X
238
10
114
2
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Transport properties of thin flakes of the antiferromagnetic topological insulator MnBi2Te4

Cited by 110 publications

References 20 publications

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Universal gapless Dirac cone and tunable topological states in (MnBi2Te4)m(

Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and Li1, Gao2, Duan3 et al. 2019Phys. Rev. X238101142View full textAdd to dashboardCite

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Electronic States and Magnetic Response of MnBi₂Te₄ by Scanning Tunneling Microscopy and Spectroscopy

Electronic States and Magnetic Response of MnBi₂Te₄ by Scanning Tunneling Microscopy and Spectroscopy

Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and
Li¹,
Gao²,
Duan³
et al. 2019
Phys. Rev. X
238
10
114
2
View full text Add to dashboard Cite