Transport properties of tellurium films prepared by hot wall epitaxy

Athwal, I. S.; Kaur, Jaswinder; Bedi, R. K.

doi:10.1016/0040-6090(88)90186-1

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2022

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Cited by 4 publications

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“…The theoretical value of the bulk resistivity of a pure Te film deposited on a glass substrate by hot wall epitaxy has been reported to be approximately 0.3Ω cm, [ 25 ] which is significantly higher than the resistivity of the SnTe compound (1.4 × 10 −4 Ω cm [ 9 ] ). Therefore, the SnTe film that included Te segregation would exhibit higher resistivity.…”

Section: Resultsmentioning

confidence: 99%

Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

Tsuboi

Kobayashi

et al. 2022

Physica Status Solidi (a)

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SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X‐ray diffraction results, the samples grown with high beam‐intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

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Section: Resultsmentioning

confidence: 99%