Transport properties of single TiO2 nanotubes

Stiller, Markus; Barzola‐Quiquia, J.; Lorite, I.; Esquinazi, P.; Kirchgeorg, Robin; Albu, Sergiu P.; Schmuki, Patrik

doi:10.1063/1.4826640

Cited by 24 publications

(35 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several authors investigated the solid state electrical conductivity of anodic TiO 2 nanotube layers, [29][30][31][32][33] mainly as a function of annealing conditions or effects of dopants. The majority of the work is carried out with two-point measurements, such as in Figure 19.a, where a top contact metal (mainly Au, Pt, Al) is evaporated and the resistivity to the Ti-back contact is measured.…”

Section: Conductivitymentioning

confidence: 99%

See 1 more Smart Citation

One-Dimensional Titanium Dioxide Nanomaterials: Nanotubes

2014

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Conductivitymentioning

confidence: 99%

“…These nanotube geometries may be considered (in a physical sense) as "true" nanotubes, as quantum size and dimensionality may fully be effective on physical and chemical properties, such as electron mobility, optical band-gap, and surface reactivity [21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] .…”

mentioning

confidence: 99%

One-Dimensional Titanium Dioxide Nanomaterials: Nanotubes

2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…Studies on a single T-NTA shows ohmic (linear) behavior at room temperature. 16 However, for the CZTS TF/TiO 2 NCF assembly, the cumulative effect of band mismatch and TiO 2 -oxygen vacancies contribute to nonlinear I-V characteristics. TiO 2 is a complex system, which contains several point defects including oxygen vacancies, titanium vacancies, titanium interstitials, electrons and holes.…”

Section: Resistance = Aementioning

confidence: 99%

“…In contrast, one mechanism (Mott variable range hopping) dominates in a single nanotube. 16 The effect of TiO 2 grain boundary density on conduction is not taken into account; however, CZTS grains may have some contribution on charge transport as well. Studies on a single T-NTA shows ohmic (linear) behavior at room temperature.…”

Section: Resistance = Aementioning

confidence: 99%

See 1 more Smart Citation

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

show abstract

A Review of the Terahertz Conductivity and Photoconductivity of Carbon Nanotubes and Heteronanotubes

Burdanova

Tsapenko

Kharlamova

et al. 2021

Advanced Optical Materials

View full text Add to dashboard Cite

particular, at that stage, it was realized that single-walled carbon nanotubes (SWCNTs) shown in Figure 1a have a unique property that makes them different from other NTs: they are semiconducting or metallic depending on their chirality in comparison to graphene, a Dirac semimetal. This makes SWCNTs promising for both electronic and optoelectronic applications. [11] In the years following the work of Iijima, numerous different classes of 1D materials were reported. In 1992 and 1995, the discovery of WS 2 and MoS 2 NTs were reported. [4,6] In 1999, initial reports showed the feasibility of growing highly aligned arrays of TiO 2 NTs. [12] A number of groups reported progress in the synthesis of BN NTs. [5] The main difference between non-organic NTs (for example, MoS 2 , MoSe 2 , WS 2 , WSe 2 , etc.) and CNTs is that non-organic NTs are mostly semiconducting. Their mobility and transport properties have been widely investigated. [13][14][15] The family of 1D materials has grown appreciably. Each new NT demonstrated unique properties associated with their small dimensionality, thus being different from their 2D and 3D counterparts. In the same way as proposed for 2D materials, [16] NTs can be grown outside or inside of each other, like a Russian doll, forming 1D van der Waals (vdW) heterostructure (or so-called heteronanotube) (Figure 1d). In most of them, CNTs are used as a template for growth. For example, the first composite of CNTs wrapped by MoS 2 NTs (here and later in the text-C@ MoS 2 NT) was synthesized in 2006. [17] Later on, the charge transport properties were investigated in ref. [18]. Recently the optical, electrical and transport properties of atomically thin Terahertz (THz) spectroscopy is an ideal non-contact and non-destructive technique that probes the electrical conductivity of nanomaterials. This review presents the current status of research in the THz properties of quasi-1D materials, such as nanotubes (NTs) and NT heterostructures. Detailed descriptions of THz experimental methods (THz time-domain spectroscopy, optical pump-THz probe spectroscopy) and conductivity extraction methods are presented along with the physical models (Drude, plasmon, effective medium theories, etc.) supporting them. Optoelectronic applications, such as optical modulators, switches, and shielding devices, are discussed and illustrate a bright future for these materials.

show abstract

Transport properties of single TiO2 nanotubes

Cited by 24 publications

References 28 publications

One-Dimensional Titanium Dioxide Nanomaterials: Nanotubes

One-Dimensional Titanium Dioxide Nanomaterials: Nanotubes

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

A Review of the Terahertz Conductivity and Photoconductivity of Carbon Nanotubes and Heteronanotubes

Contact Info

Product

Resources

About

Transport properties of single TiO2 nanotubes

Cited by 24 publications

References 28 publications

One-Dimensional Titanium Dioxide Nanomaterials: Nanotubes

One-Dimensional Titanium Dioxide Nanomaterials: Nanotubes

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

A Review of the Terahertz Conductivity and Photoconductivity of Carbon Nanotubes and Heteronanotubes

Contact Info

Product

Resources

About

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device