Transport properties of n-CdS0.5Se0.5/p-InP heterojunction cells

DC electric and photoelectric measurements of CdTe thin films in Schottky-barrier cells

“…The mean values of J s and m for three different cells were (3.170.1) Â 10 À5 Am À2 and 1.9170.05, respectively. These devices were nonideal in showing a diode quality factor m>1, which may be attributed to the recombination of electrons and holes in the depletion region and also to the increased effect of the diffusion current on increasing the applied voltage [11,12]. In the low-voltage region, the applied voltage seems to be dropped completely across the Schottky-junction.…”

Electrical conductivity and the effect of temperature on photoconduction of n-ZnSe/p-Si rectifying heterojunction cells

“…According to equation (1), it will be possible to estimate the total trap density, N t , from the J -V dependence only if N 0 and µ are known. Therefore, the value of N t was calculated and found to be 5.5×10 16 cm −3 . It should be mentioned that the dark J -V characteristics of the n-ZnSe/p-Si heterojunction cell were definitely of the diode type with the forward direction corresponding to the negative potential on n-ZnSe.…”

Studies on structural, optical, and photoelectric properties of CdS1-xSexfilms fabricated by selenization of chemical bath deposited CdS films

“…CdS 1– x Se x film with tunable band gap between 1.72 (for CdSe) and 2.42 eV (for CdS) will be a good choice to enhance both light absorption and photoactivity. Many efforts have been made to prepare CdS 1– x Se x film, such as epitaxial growth , spray pyrolysis , evaporation , laser ablation technique , and chemical bath deposition (CBD) . Among these techniques, chemical bath deposition is considered to be a promising method because it is a simple and economical technique.…”