1 Introduction Due to the predicted half metallic character of some Heusler alloys [1] (i.e. a 100% spin polarization at the Fermi energy E F ) they are promising materials for spintronic devices like magnetic random access memory (MRAM) and magnetic sensors [2,3]. A full Heusler alloy is given by a composition 2 X YZ , where X and Y is a transition metal element and Z a group III, IV or V element. High tunnel magneto resistance (TMR) ratios for different alloys can be found in literature for low temperature measurements <10 K [4, 5], but the high TMR ratio is not conserved at room temperature. LDA + U bandstructure calculations of the well known alloys Co 2 MnSi and Co 2 FeSi show E F close to the valence band and close to the conductance band edge of the minority carriers, respectively. This may lead to a reduced spin polarization at room temperature. E F for the quaternary alloy Co 2 Mn 0 5. Fe 0 5 . Si is predicted to be positioned directly in the center of the gap [6]. Thus, one can expect, that the halfmetallic behaviour is stable against thermal influence and high TMR ratios are conserved at room temperature, too.