1966
DOI: 10.1103/physrev.144.593
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Transport Properties of LaF3

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Cited by 137 publications
(50 citation statements)
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“…19F NMR investigations on LaF 3 show that fluoride ions are the migrating species [8,21,26]. As outlined before, Schottky defects are the most probable intrinsic point defects in LaF 3 , and a vacancy mechanism for anion conduction is therefore most likely.…”
Section: Discussionmentioning
confidence: 97%
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“…19F NMR investigations on LaF 3 show that fluoride ions are the migrating species [8,21,26]. As outlined before, Schottky defects are the most probable intrinsic point defects in LaF 3 , and a vacancy mechanism for anion conduction is therefore most likely.…”
Section: Discussionmentioning
confidence: 97%
“…Thermal expansion measurements indicate the bulk volume to expand faster than the unit cell volume. This suggests that the thermal formation of point defects in LaF 3 occurs primarily by the Schottky mechanism [8]. Furthermore, calculations using structural data of LaF 3 [13], reveal that the interstitial sites (V x ) in LaF 3 allow ions with a radius up to 0.84 A.…”
Section: Crystal Structure and Possible Conduction Pathsmentioning
confidence: 99%
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“…This is at least partly due to the tendency of LaF 3 crystals to form oxygen-rich surface layers, which interfere with the determination of the bulk electrical properties. Experimental plots [ 14,15] of log oT against 1/T show a change in slope at about 100°C for the pure single crystal and dilute solid solutions Lal_xBaxF3_ x. Sher et al [15] interpret the change in slope as due to the dissociation of impurity-vacancy pairs, with the impurity being either oxygen or a divalent cation. Schoonman et al [ 14], however, discount this interpretation on the basis of their measurements on the solid solution up to x = 0.05.…”
Section: + Pe/p1mentioning
confidence: 99%
“…The elements R 1 and C 1 describe the behavior of a macroscopic bulk polarization arising from the inequality of the jump probabilities. If we set P3 = 0, a = b, and P = P1 = P2 so that all nearest-neighbor jumps are equivalent, we fred R 1 -~ oo, C 1 ~ 0 and R b ~Rb0, with Rb0 = lk T/e2coPo a2 , (15) so that the equivalent circuit reduces to the geometric capacitance and bulk resistance in parallel. The appearance of the Debye length in the expression for C 1 is consistent with a polarization arising from the motion of free charge carriers, and represents the screening of the internal field by the mobile charges.…”
Section: Model and Equivalent Circuitmentioning
confidence: 99%