Transport properties of Be- and Si-doped AlSb

Bennett, B. R.; Moore, W. J.; Yang, M. J.; Shanabrook, B. V.

doi:10.1063/1.373470

Cited by 17 publications

(10 citation statements)

References 24 publications

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“…The linear variation of hole concentration versus Be dopant density shown in figure 2 also indicates that the interaction between majority carriers and defects does not dramatically affect the carrier concentration. We should here also mention that Bennett et al [27] found that the doping efficiencies of Be in GaAs on undoped GaAs(001) substrate and AlSb on undoped GaAs (001) substrate were equal in the 10 16 -10 19 cm -3 range (using 5 nm undoped GaSb cap on the doped AlSb epilayer), consistent with previous measurement results in our group [28].…”

Section: Resultssupporting

confidence: 81%

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

Patra

Tran

Vines

et al. 2017

Journal of Crystal Growth

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Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al 0.9 Ga 0.1 As 0.06 Sb 0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al 0.3 Ga 0.7 As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest

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Section: Resultssupporting

confidence: 81%

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

Patra

Tran

Vines

et al. 2017

Journal of Crystal Growth

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“…There were also previous reports of high-mobility InAs quantum wells on AlSb buffers grown at 2.0 ML/s. 28,29 We see that high mobilities can be achieved for buffer layers that are thinner and grown faster than normal. For example, sample 5M, with a buffer thickness of 0.57 lm and growth rate of 1.13 ML/s, had a roomtemperature mobility of 23,800 ± 2200 cm 2 /V s. Sample 6J, with a buffer thickness of 0.90 lm and a growth rate of 1.91 ML/s, had a room-temperature mobility of 22,400 ± 800 cm 2 /V s. All of our samples with a buffer layer thickness greater than 0.5 lm had mobilities greater than 20,000 cm 2 /V s. Sheet carrier densities varied between 0.7 9 10 12 /cm 2 and 1.2 9 10 12 /cm 2 with no clear correlation to buffer layer thickness or growth rate.…”

Section: Resultsmentioning

confidence: 94%

AlGaSb Buffer Layers for Sb-Based Transistors

Bennett

Khan

Boos

et al. 2010

Journal of Elec Materi

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“…This observation is in agreement with Hall and resistivity measurements. [22][23][24] Within the error bars of our calculations the 0 / −1 equilibrium transition levels for C, Si, and Ge coincide with the VBM whereas for Sn the equilibrium transition level is located 0.1 eV above the VBM ͑compare Fig. 3͒.…”

Section: A Group IV Elements: C Si Ge and Snmentioning

confidence: 84%

Extrinsic point defects in aluminum antimonide

2010

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We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative scattering cross strengths for these defects to determine their impact on charge carrier mobility. Furthermore, we employ a self-consistent charge equilibration scheme to determine the net charge carrier concentrations for different temperatures and impurity concentrations. Thereby, we are able to study the effect of impurities incorporated during growth and identify optimal processing conditions for achieving compensated material. The key findings are summarized as follows. Among the group IV elements, C, Si, and Ge substitute for Sb and act as shallow acceptors, while Sn can substitute for either Sb or Al and displays amphoteric character. Among the group VI elements, S, Se, and Te substitute for Sb and act as deep donors. In contrast, O is most likely to be incorporated as an interstitial and predominantly acts as an acceptor. As a group V element, P substitutes for Sb and is electrically inactive. C and O are the most detrimental impurities to carrier transport, while Sn, Se, and Te have a modest to low impact. Therefore, Te can be used to compensate C and O impurities, which are unintentionally incorporated during the growth process, with minimal effect on the carrier mobilities.Comment: 12 pages, 12 figure

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Transport properties of Be- and Si-doped AlSb

Cited by 17 publications

References 24 publications

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

AlGaSb Buffer Layers for Sb-Based Transistors

Extrinsic point defects in aluminum antimonide

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