Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor

Jazi, Maryam Alimoradi; Janssen, Vera A. E. C.; Evers, Wiel H.; Tadjine, Athmane; Delerue, Christophe; Siebbeles, Laurens D. A.; Zant, Herre S. J. van der; Houtepen, Arjan J.; Vanmaekelbergh, Daniël

doi:10.1021/acs.nanolett.7b01348

Cited by 42 publications

(46 citation statements)

References 39 publications

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“…The mobilities reported for SL‐EDA samples are obtained from two substrates, as shown by the different colors in Figure f, with average mobility of 12 and 15 cm 2 V −1 s −1 . The values obtained for the non‐EDA superlattices are comparable to those reported by Alimoradi Jazi et al, while the EDA‐based ones (averaged on either substrate) are the highest ever reported for quantum confined lead‐chalcogenide superlattice samples.…”

supporting

confidence: 85%

“…This possibility stems from the faceted nature of the CQDs; crystal orientation‐specific interactions and different binding energy of the ligands at the main crystallographic facets drive the orientation process . While much work has been done on the formation mechanism and properties of the superlattices on solid substrates, fewer studies investigated liquid interface‐grown layers, and even fewer have been devoted to study the structure–property relation in these samples . Whitham et al measured the effect of disorder on charge localization in PbSe CQD superlattices, they deduced a carrier localization over two to three quantum dots in their system and calculated a disorder limit below which band‐like, coherent transport is expected to occur .…”

mentioning

confidence: 99%

“…Evers et al observed a similar degree of delocalization in samples prepared using a slightly different method . Alimoradi Jazi et al observed contactless mobilities averaging to 3.6 cm 2 V −1 s −1 , setting the superlattices on par with the best spin‐coated PbSe samples . However, the transport properties have so far not reached the quality expected from ordered, strongly coupled arrays, and no complete work has been done on connecting the electronic coupling, the nanostructure and the electrical transport properties in superlattices, especially not in samples formed using different ligands.…”

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confidence: 99%

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Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

et al. 2018

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Colloidal quantum dots (CQDs) are nanoscale building blocks for bottom-up fabrication of semiconducting solids with tailorable properties beyond the possibilities of bulk materials. Achieving ordered, macroscopic crystal-like assemblies has been in the focus of researchers for years, since it would allow exploitation of the quantum-confinement-based electronic properties with tunable dimensionality. Lead-chalcogenide CQDs show especially strong tendencies to self-organize into 2D superlattices with micrometer-scale order, making the array fabrication fairly simple. However, most studies concentrate on the fundamentals of the assembly process, and none have investigated the electronic properties and their dependence on the nanoscale structure induced by different ligands. Here, it is discussed how different chemical treatments on the initial superlattices affect the nanostructure, the optical, and the electronic-transport properties. Transistors with average two-terminal electron mobilities of 13 cm V s and contactless mobility of 24 cm V s are obtained for small-area superlattice field-effect transistors. Such mobility values are the highest reported for CQD devices wherein the quantum confinement is substantially present and are comparable to those reported for heavy sintering. The considerable mobility with the simultaneous preservation of the optical bandgap displays the vast potential of colloidal QD superlattices for optoelectronic applications.

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confidence: 99%

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Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

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“…This avoids the introduction of Br À and SCN À ion impurities into the sample (which occur with the tetrabutylammonium bromide and ammonium thiocyanate treatments, respectively) that could potentially be problematic in some scenarios and applications. We anticipate that the PbSe nanocrystal films with SnSe-like interstitial material in this work could be promising for thin film transistors, [42,43] and optoelectronics. [44][45][46][47] PbSe is also an excellent thermoelectric material [48,49] and Sn-alloyed PbSe can function as topological crystalline insulator.…”

Section: Treatment Of Pbse Nanocrystal Thin Films With Tin(iv) Methylmentioning

confidence: 95%

Tin(IV) Methylselenolate as a Low Temperature SnSe Precursor and Conductive “Glue” Between Colloidal Nanocrystals

Vartak

Wang

2020

ChemNanoMat

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We report the synthesis of a soluble precursor that transforms into crystalline SnSe at 200 °C. This transformation temperature is significantly lower than the 270–350 °C range of previously reported tin selenide precursors. This precursor is synthesized by reacting tin with dimethyl diselenide and we identify the precursor as tin(IV) methylselenolate using a combination of mass spectrometry, Raman spectroscopy, and nuclear magnetic resonance spectroscopy. We then chemically treat PbSe colloidal nanocrystals with this precursor and subject them to mild annealing. We characterize the chemical and structural changes during this processing using infrared spectroscopy, aberration‐corrected scanning transmission electron microscopy, and X‐ray photoelectron spectroscopy. These characterization studies indicate the successful formation of a SnSe‐like material that fills the interstitial space between the PbSe nanocrystal cores. We find that the electrical conductivity of these nanocrystal films is comparable to other excellent treatments used to improve charge transport. This excellent charge transport demonstrates the utility of tin(IV) methylselenolate as a conductive “glue” between nanocrystals.

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“…Optimizing the method, superlattice domains of several micrometers can be achieved, and the properties of the structures can be studied. The interest in these structures has recently been validated by two works reporting record charge carrier mobilities in PbSe CQD superlattices, with a clear improvement compared to what is found in traditional disordered arrays …”

Section: Assembly Of Cqd Thin Filmsmentioning

confidence: 99%

Lead‐Chalcogenide Colloidal‐Quantum‐Dot Solids: Novel Assembly Methods, Electronic Structure Control, and Application Prospects

Balazs

Loi

2018

Advanced Materials

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Colloidal particles are formed and stabilized by surrounding the core with a surfactant shell that keeps the CQDs isolated and prevents charge transport though the arrays. [6] Replacing this shell by shorter molecules, so-called ligands, decreases the interparticle distance and increases the electronic coupling. This is thus a crucial step in forming conductive, practically relevant assemblies.Most early studies relied on a repetitive, layer-by-layer deposition and ligand exchange of CQDs to achieve thick conductive films, a method that resulted in the demonstration of field effect transistors and solar cells of noteworthy performances. [7][8][9][10][11][12][13][14][15] However, this technique only allows for limited control of the nanostructure and is not suitable for upscaling. The last few years brought several improvements in controlling the properties of CQD thin films with focus on both applications and the underlying science. [16,17] Current solar cells and transistors based on CQD arrays are on par with or better than the semiconducting polymer-based devices, showing the true prospects of these materials. [18][19][20] The most interesting feature of CQD solids is their enormous specific surface area; around one third of the atoms of a few nanometer CQDs are located at the surface, experiencing lower coordination than in bulk. Changing the dielectric or chemical environment thus has a significant effect on the overall properties. Much research has been conducted into this direction as well, leading to the ability to design the properties for applications.Here, we aim to show the most recent developments, put these results in perspective, and identify the limiting factors that limit further improvement in device performance. We focus on lead chalcogenides as they have been the subject of a variety of approaches to form solids, mainly because of their prospects in solar cell applications. However, the fundamental findings reported are valid for CQDs in general, and most methods can be used for other types of semiconductor nanocrystals as well. Although, numerous studies discuss the unique optical properties of CQDs, we have chosen to avoid their discussion here to be able to focus on the fabrication, electronic properties, and applications of CQD assemblies. In Section 2, two novel directions in sample fabrication of lead-chalcogenide CQD assemblies are discussed. The first one, the solution-phase ligand exchange, is relevant for mass production of devices, while the other, the self-assembly, is important for creating arrays with controlled nanostructure and order. Related to the difference in The quest for novel semiconductors with easy, cheap fabrication and tailorable properties has led to the development of several classes of materials, such as semiconducting polymers, carbon nanotubes, hybrid perovskites, and colloidal quantum dots. All these candidates can be processed from the liquid phase, enabling easy fabrication, and are suitable for different electronic and optoelectronic applications. Here, rece...

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Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor

Cited by 42 publications

References 39 publications

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

Tin(IV) Methylselenolate as a Low Temperature SnSe Precursor and Conductive “Glue” Between Colloidal Nanocrystals

Lead‐Chalcogenide Colloidal‐Quantum‐Dot Solids: Novel Assembly Methods, Electronic Structure Control, and Application Prospects

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Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor

Cited by 42 publications

References 39 publications

Electron Mobility of 24 cm2 V−1 s−1 in PbSe Colloidal‐Quantum‐Dot Superlattices

Electron Mobility of 24 cm2 V−1 s−1 in PbSe Colloidal‐Quantum‐Dot Superlattices

Tin(IV) Methylselenolate as a Low Temperature SnSe Precursor and Conductive “Glue” Between Colloidal Nanocrystals

Lead‐Chalcogenide Colloidal‐Quantum‐Dot Solids: Novel Assembly Methods, Electronic Structure Control, and Application Prospects

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Product

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Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices

Electron Mobility of 24 cm² V⁻¹ s⁻¹ in PbSe Colloidal‐Quantum‐Dot Superlattices