Transport properties in Sb-doped SnO2 thin films: Effect of UV illumination and temperature dependence

Ammari, Abdelkader; Trari, M.; Zebbar, N.

doi:10.1016/j.mssp.2018.09.003

Cited by 34 publications

(13 citation statements)

References 56 publications

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“…Although 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 luminescent transitions are the most common and are discussed in this paper, the other two have been reported [37][38][39][40]. In our data, some of these transitions were identified only by evaluating the first derivative as shown in the inset of Fig.…”

Section: Photoluminescence Datamentioning

confidence: 74%

“…Figure 5c shows the PL spectra for the GaAs/SnO 2 :at% Eu (0.05, 0.1) samples, annealed at 200 °C by 1 h, and GaAs/ SnO 2 :2%Eu annealed at 400 °C by 20 min, with excitation by the 488 nm (2.53 eV) line from an Ar + laser, which has energy below the SnO 2 bandgap, assuring that no energy transfer from the matrix is responsible for the Eu 3+ transitions. Four transitions were identified for these three samples: 5…”

Section: Photoluminescence Datamentioning

confidence: 99%

“…There is currently great interest in semiconductor oxides and their heterostructures due to their potential applications in spintronic devices [1], photocatalysis [2], lightemitting diodes, lasers [3] and solar cells [4]. Tin dioxide (SnO 2 ) is one of the most used semiconductor oxides, related to outstanding properties such as high transparency in the visible range, high reflectivity in the infrared [5] and high n-type free carrier concentration [6], even in the undoped form, which may lead to a high conductivity when electron scattering phenomena are prevented. Doped SnO 2 thin films are used as transparent electrodes in several systems: perovskite solar cells [7], lithium-ion batteries [8] and organic photovoltaic cells [9].…”

Section: Introductionmentioning

confidence: 99%

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X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

et al. 2020

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X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO 2. XANES data are used for analyzing the local organization around Eu in the heterostructure formed by GaAs and Eu-doped SnO 2. The differences between the XANES data for these samples and data obtained for Eu-doped SnO 2 thin films, deposited on glass substrate, are assumed as responsible for the differences in the photoluminescence (PL) spectra concerning the Eu 3+ emission, since films deposited on glass substrate do not present Eu 3+ PL transitions until the annealing temperature is rather high. Eu 3+ emission is explored using two different excitation sources: 350 nm from a Kr + laser (above SnO 2 energy bandgap) and 488 nm from an Ar + laser (below SnO 2 bandgap energy). The existence of more organized regions around the Eu 3+ site observed for the heterostructure surface may be associated with the Eu 3+ luminescent emission. The main and secondary features in the XANES show that there are differences in the average local Eu environment for the SnO 2 :Eu isolated thin films and heterostructures, being more organized in the latter. Electrical characterization evidences that the portion of the resistivity reduction that corresponds to photo-ionized intrabandgap states is responsible for the persistent photoconductivity phenomenon in the heterostructures.

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Section: Photoluminescence Datamentioning

confidence: 74%

Section: Photoluminescence Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

et al. 2020

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“…Finally, other factors may explain the differences in the PL emission intensity, depending on the crystal size 41,42 . Some authors have reported variations in the emission intensity of doped nanocrystalline phosphors 43 and optical properties, due to a reduction in the size of particles in the nano-range scale 44,45 . They observed that a decrease in the particle size of doped nanocrystalline systems increases the intensity of PL emissions.…”

Section: Luminescent Propertiesmentioning

confidence: 99%

F-127-Assisted Sol-Gel Synthesis of Gd2O3:Eu3+ Powders and Films

et al. 2019

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In the current work, the influence of Pluronic F-127 (S = F-127) and temperature on the luminescent properties of Gd 2 O 3 :Eu 3+ (Gd:S = 1:2) powders and films was studied. In order to synthesize the powders and films (by the dip-coating technique), Gd 2 O 3 : Eu 3+ (5 mol%) ceramics were elaborated by the sol-gel route, using gadolinium and europium nitrates as precursors. The results obtained by means of X-ray diffraction, confirmed the presence of the cubic structure of Gd 2 O 3 (in 800 ºC heat-treated powders and 700 ºC heat-treated films), and crystals with nanometer sizes of ~19 nm, and ~15 nm, corresponding to the spherical and laminar-like morphologies of densified powders and films, respectively. Crystallites from the cubic and monoclinic structure were present on Gd 2 O 3 : Eu 3+ -modified films up to 800 ºC. Chemical identification of the bonds present in the films was performed by Fourier transform infrared spectroscopy, which identified representative infrared absorption at 543 cm -1 , attributable to the Gd-O vibration. Photoluminescence studies showed that when the powders and films were heat-treated at 800 ºC, the intensity of their luminescence at the 5 D 0 → 7 F 2 Eu 3+ transition (618 nm) was enhanced by the presence of F-127.

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“…Furthermore, lower valence cations, such as nitrogen (N), indium, and antimony (Sb), have been suggested to be good p‐type dopants in SnO 2 . In contrast, SnO 2 films doped with bismuth (Bi), which is a lower valence cation, N‐doped SnO, Sb‐doped SnO 2 films, and Sb‐doped SnO 2 epitaxial films exhibit n‐type conductivity. Hence, there appears to be a discrepancy in the influences of lower valence cations on the properties of SnO x thin films.…”

Section: Introductionmentioning

confidence: 99%

Effects of Oxygen Ratio on the Properties of Tin Oxide Thin Films Doped with Bismuth

Bang

Seo

Bae

et al. 2019

Physica Status Solidi (a)

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This study examins the effects of the oxygen ratio on the properties of bismuth (Bi)‐doped tin oxide (Bi‐SnOx) films deposited by radio frequency magnetron sputtering using a SnO (90 at%)‐Bi (10 at%) ceramic target. The properties of the samples are characterized by X‐ray photoelectron spectroscopy (XPS), Hall effect measurements, dynamic‐secondary ion mass spectrometry (D‐SIMS), and X‐ray diffraction (XRD). The samples deposited without oxygen gas exhibit Sn4+ and Sn2+ XPS peak areas of 44.7 and 41.1%, respectively. The Sn4+ area increases to 64.1% with increasing oxygen ratio up to 20% with a concomitant decrease of the Sn2+ area to 26%, indicating that SnO2 with n‐type conductivity is the dominant phase under a higher oxygen partial pressure. XPS shows that with increasing oxygen ratio, the chemical state of Bi changes from metallic Bi (Bi0) to Bi3+. Furthermore, with increasing oxygen ratio, the Bi content in the samples increases because of the increase in Bi2O3 formation, which causes a decrease in the number of oxygen vacancies in the samples. These results suggest that the oxygen ratio is useful for controlling Bi doping in SnOx films. Therefore, Bi doping is valuable for suppressing the formation of oxygen vacancies and improving the properties of SnOx films.

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Transport properties in Sb-doped SnO2 thin films: Effect of UV illumination and temperature dependence

Cited by 34 publications

References 56 publications

X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

F-127-Assisted Sol-Gel Synthesis of Gd2O3:Eu3+ Powders and Films

Effects of Oxygen Ratio on the Properties of Tin Oxide Thin Films Doped with Bismuth

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