Transport properties and lithium insertion study in the p-type semi-conductors AgCuO2 and AgCu0.5Mn0.5O2

Sauvage, Frédéric; Muñoz‐Rojas, David; Poeppelmeier, Kenneth R.

doi:10.1016/j.jssc.2008.10.038

Cited by 29 publications

(23 citation statements)

References 54 publications

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“…5.19 . The values obtained for the electrical resistivity are about 50-300 times lower than in the case of bulk non-sintered low-density pellets, where particle connections are expected to be quite resistive [ 59 ]. Thus, the transport results obtained on individual particles are strongly indicative of the metallic conduction inside the particles and thus of the electron delocalisation in the AgCuO 2 compound [ 57 ].…”

Section: Electrical Contacts To Nanowires and Nanoparticles By Fibidmentioning

confidence: 78%

Nanoscale Electrical Contacts Grown by Focused Ion Beam (FIB)-Induced Deposition

Córdoba

Fernández-Pacheco

Sangiao

et al. 2013

Lecture Notes in Nanoscale Science and Technology

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Section: Electrical Contacts To Nanowires and Nanoparticles By Fibidmentioning

confidence: 78%

Nanoscale Electrical Contacts Grown by Focused Ion Beam (FIB)-Induced Deposition

Córdoba

Fernández-Pacheco

Sangiao

et al. 2013

Lecture Notes in Nanoscale Science and Technology

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“…The absorption coefficient (α) is related by:

α = (1 / d) ln [(1 - R) / T]

where T is the transmittance, R is the reflectance and d is the thickness of the crystal . The α spectrum for the Cu(Al 1/2 Fe 1/2 )O 2 sample at room temperature was recorded from 200 to 2000 nm, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…reported that mixtures of different ionic radii at the B sites in CuNi 1/2 Ti 1/2 O 2 delafossite compounds can tune the ionization energy by increasing the number of extra O atoms. In addition, there are reports on the synthesis of mixtures of different ionic radii at the B sites in delafossites, including CuNi 1/2 Ti 1/2 O 2 , CuCo 1/2 Ti 1/2 O 2 , AgNi 1/2 Ti 1/2 O 2 , AgNi 1/2 Co 1/2 O 2 , AgCu 1/2 Mn 1/2 O 2 ,, and CuAl 1/2 Cr 1/2 O 2 . At present, there are no reports on the synthesis of mixtures that contain Al 3+ (0.535 Å) and Fe 3+ (0.645 Å) ions, with different ionic radii, at the B sites in CuAl 1/2 Fe 1/2 O 2 delafossite samples, or any investigations on their optoelectronic and electronic transport properties.…”

Section: Introductionmentioning

confidence: 99%

p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl_1/2Fe_1/2O₂

et al. 2014

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CuAl1/2Fe1/2O2 delafossite was prepared using a solid‐state reaction method to investigate its optical and electronic transport properties. CuAl1/2Fe1/2O2 formed a hexagonal delafossite structure with an Rtrue3false¯m space group. The positive Seebeck coefficient and the direct optical gap of 3.6 eV confirmed that the CuAl1/2Fe1/2O2 delafossite in a p‐type transparent conducting oxide. The fluorescence emission at 390 nm (green emission) confirmed that CuAl1/2Fe1/2O2 has a direct transition band gap. Thermogravimetric analysis indicated a weight loss of 1.2%, caused by the intercalation of O atoms, which produced hole carriers from the different ionic radii at the B sites. The electric conductivity at room temperature was thermally activated, as predicted by the small‐polaron hopping mechanism, with an activation energy of 75 meV and a charge transport energy of 61 meV. CuAl1/2Fe1/2O2 delafossite exhibited p‐type optoelectronic behavior and is a transparent conducting oxide, which may be crucial in the p‐type photonic and electrode industries.

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“…Presently, AgCuO 2 has attracted lot of research interests for basic understanding as well as for different envisaged applications [53,54]. Recent studies reveal AgCuO 2 is a direct band gap (~ 1.8 eV) semiconductor and highly p-type conducting (3.2×10 −1 Siemens/cm) oxide material [55]. In AgCuO 2 oxides, both metal species are partially oxidized and the charge is delocalized among all the atoms in the material.…”

Section: Nanoparticles Of Ag In Agcuomentioning

confidence: 99%

Metallic Alloy Nanoparticles and Metal-Semiconductor Nanomaterials

Gangopadhyay¹

2018

NanoWorld J

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While bridging the gap between the atomic structures and bulk matters, nanomaterials are of great interests for fundamental understanding as well as for different application perspectives. In this article, it is proposed to provide a review regarding various synthesis processes of nanomaterials, growth mechanisms and a range of experimental techniques to discuss remarkable properties of materials at the nanoscale dimensions. Equilibrium (ambient or vacuum thermal annealing) as well as non-equilibrium (for example, utilizing ion-beams) methods are elaborated for the processing of nanomaterials. Here, nanomaterials stand for species of metal nanoparticles, bimetallic alloy nanoparticles or composite materials of metal nanoparticles in different oxide semiconductors. Akin to the pure metal nanoparticles, alloy metal nanoparticles exhibit exciting optical responses. For example, surface-plasmon resonance frequencies of bimetallic alloy nanoparticles are tunable in controlled fashions through the variation of alloy compositions. Metal nanoparticles in semiconductors are discussed to elucidate examples of quasi-particle interactions between plasmons and excitons in the composite as well as interesting photoluminescence properties of the nanomaterials. Thermal stability of semiconductors and growth of the nanoscale metal particles in the composites are found to play crucial roles in this regard. Depending on the growth of metal nanoparticles, for instance, photoluminescence intensity of semiconductors is observed to be enhanced or quenched in the metalsemiconductor composite nanostructures.

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Transport properties and lithium insertion study in the p-type semi-conductors AgCuO2 and AgCu0.5Mn0.5O2

Cited by 29 publications

References 54 publications

Nanoscale Electrical Contacts Grown by Focused Ion Beam (FIB)-Induced Deposition

Nanoscale Electrical Contacts Grown by Focused Ion Beam (FIB)-Induced Deposition

p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl_1/2Fe_1/2O₂

Metallic Alloy Nanoparticles and Metal-Semiconductor Nanomaterials

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Transport properties and lithium insertion study in the p-type semi-conductors AgCuO2 and AgCu0.5Mn0.5O2

Cited by 29 publications

References 54 publications

Nanoscale Electrical Contacts Grown by Focused Ion Beam (FIB)-Induced Deposition

Nanoscale Electrical Contacts Grown by Focused Ion Beam (FIB)-Induced Deposition

p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl1/2Fe1/2O2

Metallic Alloy Nanoparticles and Metal-Semiconductor Nanomaterials

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Product

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p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl_1/2Fe_1/2O₂