Transport phenomena in coarse-grain CdTe polycrystals

Characterization of grain boundaries in CdTe polycrystalline films

“…The potential barrier height within the range 0.2…0.3 eV at zero temperature and approximately 0.1 eV at room temperature was obtained. It should be pointed out that the determined values agree well with the data reported earlier [22]. In the Petriz model [2,3], the barrier height is given by the relation…”

Calculation of the charge-carrier relaxation time, Hall factor, and differential thermal EMF for isotropic p-type polysilicon

“…However, this has no significant effect on the calculation of the specific resistance. It should be noted that the models [1][2][3][4][5][6][7][8][9][10][11][12] are applicable for calculating specific resistance alone. A new approach to consideration of electrical conduction in polysilicon is proposed in [13].…”

“…Specific resistance of polysilicon is higher than that of single-crystal silicon for similar charge-carrier concentration and temperature due to the presence of potential barriers and misorientation of crystallites. In [1][2][3][4][5][6][7][8][9][10][11], the current through the potential barriers is considered as a result of thermal electron emission or charge-carrier tunneling in the absence of degeneration. New experimental data on the semiconductor resistors are presented in [8,9].…”

Scattering of charge carriers on a disordered atomic lattice of a P-type silicon isotropic polycrystal

“…The charge carriers moving from one crystallite to another in the polycrystal are scattered on the crystallite boundaries as on potential barriers [4,5] and on the disordered atomic lattice due to the fact that the main axes of the neighboring crystallites are rotated through a random angle relative to each other. The last scattering mechanism and the necessity of its consideration for polycrystals have long been discussed [6]; however, the problem of calculating the time of charge carrier relaxation on the disordered atomic lattice caused by the existence of the local order in the polycrystals has yet to be solved [7]. It should be noted that a phenomenological approach to calculations of the reluctance of metal polycrystals in a strong magnetic field was used in [8] for 1 β >> .…”