Transport phenomena in a slim vertical atmospheric pressure chemical vapor deposition reactor utilizing natural convection

Yamada, A.; Li, Ning; Matsuo, Miya; Muroi, Mitsuko; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, S.; Hara, Shiro

doi:10.1016/j.mssp.2017.08.024

Cited by 6 publications

(6 citation statements)

References 18 publications

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“…In contrast, in very small equipment, such as the Minimal Fab [6,7] using small wafers of a half-inch diameter, the gas supply condition is quite different from the mass-production plant. The compact-designed Minimal chemical vapor deposition (CVD) reactor [8][9][10] consumes significantly small amounts of the precursors in a short time period, for example, the trichlorosilane gas at the flow rate of 10-20 sccm at atmospheric pressure for a few minutes. In order to finely control the trichlorosilane gas concentration at the significantly low gas flow rate, any in situ real time measurement method is helpful.…”

Section: Introductionmentioning

confidence: 99%

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Muroi

Matsuo

Habuka

et al. 2018

Materials Science in Semiconductor Processing

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A silicon epitaxial growth process in a trichlorosilane-hydrogen system was evaluated using a quartz crystal microbalance (QCM) placed at the exhaust of a chemical vapor deposition reactor designed for the Minimal Fab. The QCM showed two types of the frequency decrease behaviors, that is, i) a quick shift due to the gas property change caused by the trichlorosilane gas introduction into the ambient hydrogen and ii) the continuous and gradual decrease due to the byproduct deposition on the QCM surface during the silicon epitaxial growth. Because both i) and ii) showed a relationship with the silicon epitaxial growth rate, the in-situ information obtained by the QCM was expected for the real time monitoring of the film deposition process.

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Section: Introductionmentioning

confidence: 99%

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Muroi

Matsuo

Habuka

et al. 2018

Materials Science in Semiconductor Processing

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“…As an alternative dopant gas, boron trichloride (BCl 3 ) gas, is expected for use in the silicon CVD process, because it is moderately reactive, nonflammable and less toxic [10]. In order to avoid any unexpected accident, the use of a safe gas is the practical issue for a flexibly-designed manufacturing system, such as the Minimal Fab [11]- [17]. The Minimal Fab uses compactly-designed reactors and machines, which are flexibly arranged, day by day, depending on the various products and processes.…”

Section: Introductionmentioning

confidence: 99%

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Kamochi¹,

Motomiya²,

Habuka³

et al. 2023

ACES

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A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900˚C in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 -20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% -80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

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“…One of the manufacturing systems for real-time monitoring is the Minimal Fab [9][10][11][12][13]. This is the semiconductor device manufacturing system based on the quick process developed for the small wafers with a half-inch diameter.…”

Section: Introductionmentioning

confidence: 99%

Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor

Takahashi

Otani

Muroi

et al. 2020

Materials Science in Semiconductor Processing

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Transport phenomena in a slim vertical atmospheric pressure chemical vapor deposition reactor utilizing natural convection

Cited by 6 publications

References 18 publications

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor

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