“…For the low conduction state, within the region from −5 to +4.3 V, the device was followed by a Poole–Frenkel emission (PF) mechanism, ln ( I / V ) vs V 0.5 , J PF = q μ N C E exp((− q (Φ T – ( qE /πε) 0.5 )/ KT ), where q is the electron charge, μ is the electron mobility, N C is the density of states, E is the electric field, J PF is the current density, Φ T is the electrons trap depth, K is Boltzmann’s constant, ε is the permittivity of the material, and T is the absolute temperature, and for the high conduction state (within the range from +4.3 to −3.6 V) the transport behavior of the device was followed by the Ohmic conduction mechanism, ln ( I ) vs ln ( V ), with the slop values of ∼0.96, for both sides, Figure A,B. For further mechanistic discussion, an estimated energy diagram has been proposed in Figure C. − The low conduction state was fitted with a Frenkel–Poole emission model where the charge carriers were moved forward by a trap-assisted electron transport process through an electrical insulator (carbon nitride), Figure D. The electrons are generally trapped in different localized states and then overcome due to the gradual increase of applied electric field and finally reache the conduction band of carbon nitride through a bulk-limited conduction process.…”