Transport mechanism in GaAs schottky diodes deep centres effects

Abstract

The physical origin of the excess currents in the low temperature I-U characteristics of GaAs Schottky barriers is investigated. It is found that the excess current in the low forward bias range is due to the generation of lattice defects near the metal-semiconductor interface by irradiation, thermal annealing, and external deformation. The defects produce trap levels in local parts of the space-charge region. On the basis of experimental results and a theoretical analysis it is shown that resonant tunneling assisted by deep centers is the most probable transport mechanism. l) Revolution Square 1, 634050 Tomsk, USSR.

A model of the intimate metal-semiconductor Schottky-barrier contact

“…3 shows the distortions caused by the acceptor NSSs of different densities (similar feature is also characteristic of the donor NSSs). The distortions of IV characteristics in the form of a step of current are well known in literature [20][21][22]. Generally, they are more pronounced at low temperatures and are, as a rule, excess currents in nature (the characteristic is distorted due to a shift to the left in the region of low bias voltages).…”