Transport in semiconductor superlattices in quantizing parallel electric and magnetic fields

Bryksin, V. V.; Kleinert, P.

doi:10.1016/s0921-4526(99)00099-x

Cited by 9 publications

(9 citation statements)

References 23 publications

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“…The frequency dependence of the lateral distribution function f ( k ⊥ , ω) describes the close relationship between the energy spectrum of the carriers and their statistical properties, which are related to the finite duration of all scattering events. This leads to additional quantum effects that could not be treated in our former density-matrix approach [2].…”

Section: Theoretical Modelmentioning

confidence: 96%

“…In our former density-matrix approach [2], we considered quantum features in the nonlinear high-field transport, namely electro-phonon resonances due to intra-collisional field effects. In this approach, which was in accordance with the KB ansatz, the lateral distribution function f ( k ⊥ , ω) was independent of ω.…”

Section: Theoretical Modelmentioning

confidence: 99%

“…The retroaction of the collisional broadening on the carrier statistics is accounted for by a specific explicit time dependence of the distribution function revealing the double-time nature of the problem. An adequate description of these interesting quantum effects is only possible beyond the Kadanoff-Baym (KB) ansatz [1] or the hitherto published density-matrix approaches (see, for example, [2]). With the high-field nonlinear quantum transport in QBSLs, we are faced with an interesting example in the field of quantum statistics, where only an approach going beyond the KB ansatz can cope with the complicated quantum nature of the problem.…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear transport in superlattices under quantizing magnetic fields

Kleinert¹,

Bryksin²

2002

Nanotechnology

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Abstract. The transport in semiconductor superlattices subject to quantizing electric and magnetic fields is studied based on the double-time Green function method. Our rigorous quantummechanical approach, which goes beyond the Kadanoff-Baym ansatz, reveals the hopping nature of the high-field transport in narrow-miniband superlattices. In both, the electric-and magnetic-field dependence of the current, gaps appear.

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Section: Theoretical Modelmentioning

confidence: 96%

Section: Theoretical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nonlinear transport in superlattices under quantizing magnetic fields

Kleinert¹,

Bryksin²

2002

Nanotechnology

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“…3, pronounced electro-phonon resonances appear at resonance positions lW ¼ w 0 (indicated by vertical lines). Between the main resonances, current gaps occur, which are not reproduced by data derived from the quantum Boltzmann equation (dashed line) [14]. Most interesting is the change of Depending on the strength of the coupling between the SL quantum wells, there is a crossover from the quasi-classical ( j $ 1=E) to the activated, hopping transport regime.…”

mentioning

confidence: 96%

“…Refs. [13] and [14]). We conclude that there are additional quantum effects due to the finite duration of scattering events that cannot be taken into account by the quantum Boltzmann equation.…”

mentioning

confidence: 98%

Electric‐field‐induced hopping transport in superlattices

Kleinertand

Bryksin

2003

Physica Status Solidi (b)

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A strong electric field applied parallel to the superlattice axis leads to Wannier-Stark localization. There are two formally equivalent pictures for the drift velocity and the diffusion coefficient, the hopping model, which is most suitable for localized states, and the band picture, which is applicable to extended states. Complete localization of carriers is achieved by strong electric and magnetic fields. In these molecule-like systems, there is a strong interdependence between the carrier spectrum and its statistical properties, the description of which requires a new approach. The related double-time character of the transport gives rise to interesting quantum effects in the current-voltage characteristics.1 Introduction The physics of carrier transport in solids has attracted a great deal of interest since the development of microstructured devices, which rely on unique transport properties. The character of the transport mechanism depends on the character of the eigenstates. Spatially localized charge carriers, which occur in disordered solids due to deep potential fluctuations, give rise to hopping. On the contrary, extended states in crystalline solids constitute the band-transport regime. Both mechanisms are quite differently affected by inelastic scattering, e.g., on phonons. In the band-transport regime, scattering acts as the mechanism limiting the mobility of the carriers. However, carge carrier motion via hopping requires inelastic scattering. This striking discrepancy between the two regimes appears to require the development of two quite different approaches. The question can be raised: Do we really need two different approaches or can we derive a general theory that is applicable both to disordered and ordered systems? In this contribution, we show that there is one general description of transport, the formulation of which starts either from the hopping or from the band picture.Let us take a closer look at crystalline solids. Even in these ordered systems, there exist various mechanisms that lead to spatially localized carriers, such as the formation of small polarons [1] in crystals with a narrow conduction band and strong interaction with phonons, the impurity hopping conduction and weak localization [2] in doped and compensated semiconductors, and the quantumHall effect [3] in a two-dimensional electron gas subject to a quantizing magnetic field. In the present paper, we focus on the localiztion of originally extended electronic states of a crystal by a strong electric field. Within the one-band approximation, the extended eigenstates of the ordered semiconductor become localized in the direction, in which the strong electric field is applied (Wannier-Stark localization). High-electric-field effects are most pronounced in layered semiconductor structures, which consist of a periodic array of alternating materials so that a one-dimensional superlattice (SL) is formed with a SL period d much larger than the lattice constant a of the constituent materials. Due to this large SL constant, high-fi...

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Theory of hot-electron quantum diffusion in semiconductors☆

Kleinert

2010

Physics Reports

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Transport in semiconductor superlattices in quantizing parallel electric and magnetic fields

Cited by 9 publications

References 23 publications

Nonlinear transport in superlattices under quantizing magnetic fields

Nonlinear transport in superlattices under quantizing magnetic fields

Electric‐field‐induced hopping transport in superlattices

Theory of hot-electron quantum diffusion in semiconductors☆

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