2016
DOI: 10.1103/physrevapplied.6.064020
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Transport Effects on Capacitance-Frequency Analysis for Defect Characterization in Organic Photovoltaic Devices

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Cited by 40 publications
(49 citation statements)
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“…On the one hand, this enables the characterization of defects by a straightforward technique, such as IS. On the other hand, such a technique probes many different effects in the device, especially in an organic one, which can show identical capacitive spectra to those generated by traps, inspiring discussion in the community whether such a measurement can in fact reveal the trap characteristics 45 47 . Special caution should be taken when using this method in low-mobility materials and in devices where energetic transport barriers are present.…”
Section: Resultsmentioning
confidence: 99%
“…On the one hand, this enables the characterization of defects by a straightforward technique, such as IS. On the other hand, such a technique probes many different effects in the device, especially in an organic one, which can show identical capacitive spectra to those generated by traps, inspiring discussion in the community whether such a measurement can in fact reveal the trap characteristics 45 47 . Special caution should be taken when using this method in low-mobility materials and in devices where energetic transport barriers are present.…”
Section: Resultsmentioning
confidence: 99%
“…At further increased forward-bias voltages, the hole current motion across the device proceeds towards the drift-dominant, space-charge-limited regime, while the capacitance rolls off towards three-quarters (0.75) of the geometric capacitance C geo [38,131,134]. Moreover, the frequency-dependent capacitance response of semiconductor diodes in the presence of localized defect states [22,40,135,136] has been well documented in the literature. In conjunction with probing the intrinsic C − V caused by the gradual transition from diffusion-to drift-governed transport, because of the frequency-tunable small-signal ac modulation, the C − V measurements inherently capture an extra capacitance contribution from charges thermally released from trap states.…”
Section: Capacitance-voltage Characteristicsmentioning
confidence: 87%
“…In order to correlate the distribution of sub-bandgap density of states (DOS) with its impact on charge transport, a variety of time-resolved, frequency-resolved, and temperaturedependent (opto)electrical probes has been used to extract information about the sub-bandgap DOS and its relation to charge transport. For instance, transient current measurements including time-of-flight (TOF) photocurrent may be interpreted in terms of the rate of charge-carrier release from trap states [2][3][4]26,27], thermally stimulated current (TSC) [28][29][30][31] or luminescence (TSL) [32,33] measurements analyzed in terms of thermal activation out of trap states, and frequency-domain methods [34][35][36][37][38][39][40] interpreted in terms of electrical perturbation of charge induced by a frequency-variable small-signal ac voltage superimposed on a dc bias, such that carrier motion as well as trapping and detrapping processes can be observed. However, these varying experimental methods generally expose devices to different measurement conditions (e.g., applied bias, device thickness, choice of contacts, use of background illumination or laser pulse), and data interpretation involves different theoretical approximations.…”
Section: Introductionmentioning
confidence: 99%
“…where ∆E is the energy difference of the trap energy level to the conduction/valence band is the conduction/valence band effective density of states, v th the thermal velocity, and σ n,p the electron/hole capture cross section. [34]- [37] When an AC signal is applied in capacitance measurements, the AC frequency determines which trap levels can be probed. Thus, there is maximal frequency at which the defect states are still able to respond to the voltage modulation.…”
Section: A Negative Capacitance In Siqd-ledsmentioning
confidence: 99%
“…The trap states need to fulfill the condition ω AC = τ −1 trap with the angular frequency of the AC signal ω AC = 2πf AC , while f AC is the measurement frequency. [34], [37] From this condition, an energy level known as demarcation [34], [36], [38]- [41] can be determined by rearranging Equation. 1:…”
Section: A Negative Capacitance In Siqd-ledsmentioning
confidence: 99%